Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector

doi:10.1364/OE.19.005040

Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector

Andy Eu-Jin Lim, Tsung-Yang Liow, Fang Qing, Ning Duan, Liang Ding, Mingbin Yu, Guo-Qiang Lo, and Dim-Lee Kwong »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5040-5046 (2011)
http://dx.doi.org/10.1364/OE.19.005040

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Abstract
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Abstract

We report a novel evanescent-coupled germanium (Ge) electro-absorption (EA) modulator with a small active area of 16 μm² giving an extinction ratio of at least 10 dB for a wavelength range of 1580 – 1610 nm. The modulation efficiency of the modulator at this wavelength range was ~2 dB/V. In addition, monolithic integration of both evanescent-coupled Ge EA modulator and Ge p-i-n photodetector is demonstrated for the first time.

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optical Devices

History
Original Manuscript: December 6, 2010
Revised Manuscript: February 1, 2011
Manuscript Accepted: February 3, 2011
Published: March 2, 2011

Citation
Andy Eu-Jin Lim, Tsung-Yang Liow, Fang Qing, Ning Duan, Liang Ding, Mingbin Yu, Guo-Qiang Lo, and Dim-Lee Kwong, "Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector," Opt. Express 19, 5040-5046 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-6-5040

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References

L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express 13(8), 3129–3135 (2005). [CrossRef] [PubMed]
A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007). [CrossRef] [PubMed]
M. K. Chin and W. S. C. Chang, “Theoretical design optimization of multiple-quantum-well electroabsorption waveguide modulators,” J. Quantum Electron. 29(9), 2476–2488 (1993). [CrossRef]
Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005). [CrossRef] [PubMed]
J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. Miller, “Optical modulator on silicon employing germanium quantum wells,” Opt. Express 15(9), 5851–5859 (2007). [CrossRef] [PubMed]
Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. T. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, Jr., “Quantum-confined stark effect in Ge/SiGe quantum wells on Si,” IEEE J. Sel. Top. Quantum Electron. 16(1), 85–92 (2010). [CrossRef]
S. Jongthammanurak, J. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89(16), 161115 (2006). [CrossRef]
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electroabsorption modulators,” Nat. Photonics 2(7), 433–437 (2008). [CrossRef]
K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G.-Q. Lo, and D.-L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010). [CrossRef]
T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010). [CrossRef]
M. Rouvière, M. Halbwax, J. L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005). [CrossRef]
H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B Condens. Matter 42(11), 7097–7102 (1990). [CrossRef] [PubMed]
J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö. Ilday, F. X. Kärtner, and J. Yasaitis, “High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform,” Appl. Phys. Lett. 87(10), 103501 (2005). [CrossRef]

Appl. Phys. Lett.

S. Jongthammanurak, J. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89(16), 161115 (2006). [CrossRef]
J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. Ö. Ilday, F. X. Kärtner, and J. Yasaitis, “High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform,” Appl. Phys. Lett. 87(10), 103501 (2005). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. T. Kamins, T. J. Ochalski, G. Huyet, and J. S. Harris, Jr., “Quantum-confined stark effect in Ge/SiGe quantum wells on Si,” IEEE J. Sel. Top. Quantum Electron. 16(1), 85–92 (2010). [CrossRef]
K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G.-Q. Lo, and D.-L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010). [CrossRef]
T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010). [CrossRef]

J. Quantum Electron.

M. K. Chin and W. S. C. Chang, “Theoretical design optimization of multiple-quantum-well electroabsorption waveguide modulators,” J. Quantum Electron. 29(9), 2476–2488 (1993). [CrossRef]

Nat. Photonics

J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electroabsorption modulators,” Nat. Photonics 2(7), 433–437 (2008). [CrossRef]

Nature

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334–1336 (2005). [CrossRef] [PubMed]

Opt. Eng.

M. Rouvière, M. Halbwax, J. L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng. 44(7), 075402 (2005). [CrossRef]

Opt. Express

Phys. Rev. B Condens. Matter

H. Shen and F. H. Pollak, “Generalized Franz-Keldysh theory of electromodulation,” Phys. Rev. B Condens. Matter 42(11), 7097–7102 (1990). [CrossRef] [PubMed]

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