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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 6 — Mar. 14, 2011
  • pp: 5379–5385

Energy transfer and stimulated emission dynamics at 1.1 μm in Nd-doped SiNx

Rui Li, Selçuk Yerci, Sergei O. Kucheyev, Tony van Buuren, and Luca Dal Negro  »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5379-5385 (2011)

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Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 μm emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 μm was demonstrated due to stimulated emission at the whispering gallery resonant modes. These results provide an alternative approach for the engineering of Si-based optical amplifiers and lasers on a silicon nitride materials platform.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(160.5690) Materials : Rare-earth-doped materials
(230.5750) Optical devices : Resonators
(140.3948) Lasers and laser optics : Microcavity devices

ToC Category:
Integrated Optics

Original Manuscript: December 20, 2010
Revised Manuscript: February 2, 2011
Manuscript Accepted: February 18, 2011
Published: March 7, 2011

Rui Li, Selçuk Yerci, Sergei O. Kucheyev, Tony van Buuren, and Luca Dal Negro, "Energy transfer and stimulated emission dynamics at 1.1 μm in Nd-doped SiNx," Opt. Express 19, 5379-5385 (2011)

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