Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

doi:10.1364/OE.19.005464

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

Yongshun Sun, . Rusli, Mingbin Yu, Joe Salfi, Christina Souza, Harry E. Ruda, Navab Singh, Foo Kai Lin, Patrick Lo, and Dim Lee Kwong »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5464-5469 (2011)
http://dx.doi.org/10.1364/OE.19.005464

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Abstract
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Abstract

P-i-n junctions were fabricated along Si nanowires (SiNWs) via the conventional top-down approach using optical lithography. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). The photodiodes exhibit very good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW. The photocurrent spectral response exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO₂/Si cavity.

OCIS Codes
(230.5170) Optical devices : Photodiodes
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:
Detectors

History
Original Manuscript: November 24, 2010
Revised Manuscript: February 16, 2011
Manuscript Accepted: February 21, 2011
Published: March 8, 2011

Citation
Yongshun Sun, . Rusli, Mingbin Yu, Joe Salfi, Christina Souza, Harry E. Ruda, Navab Singh, Foo Kai Lin, Patrick Lo, and Dim Lee Kwong, "Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions," Opt. Express 19, 5464-5469 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-6-5464

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References

M. T. Björk, J. Knoch, H. Schmid, H. Riel, and W. Riess, “Silicon nanowire tunneling field-effect transistors,” Appl. Phys. Lett. 92(19), 193504 (2008). [CrossRef]
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X. T. Vu, R. GhoshMoulick, J. F. Eschermann, R. Stockmann, A. Offenhäusser, and S. Ingebrandt, “Fabrication and application of silicon nanowire transistor arrays for biomolecular detection,” Sens. Actuators B Chem. 144(2), 354–360 (2010). [CrossRef]
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Adeyeye, A. O.
Agarwal, A.
Agarwal, R.
Balasubramanian, N.
Bera, L. K.
Björk, M. T.
Brongersma, M. L.
Buddharaju, K.
Cao, L.
Chan, C. T.
Clemens, B.
Cui, Y.
Ding, G.
Eschermann, J. F.
Fan, P.
Fang, W. W.
GhoshMoulick, R.
Grove, A. S.
Hayden, O.
Hoe, K. M.
Ingebrandt, S.
Knoch, J.
Kwong, D. L.
Lao, I. K.
Leistiko, O.
Lieber, C. M.
Lim, F. Y.
Lo, G. Q.
Offenhäusser, A.
Omampuliyur, S. R.
Park, J.-S.
Riel, H.
Riess, W.
Rustagi, S. C.
Sah, C. T.
Schmid, H.
Sheng, P.
Singh, N.
Stockmann, R.
Tripathi, D.
Tung, C. H.
Vu, X. T.
Zhang, Z. Q.

Appl. Phys. Lett.

M. T. Björk, J. Knoch, H. Schmid, H. Riel, and W. Riess, “Silicon nanowire tunneling field-effect transistors,” Appl. Phys. Lett. 92(19), 193504 (2008). [CrossRef]

IEDM Tech. Dig

N. Singh, F. Y. Lim, W. W. Fang, S. C. Rustagi, L. K. Bera, A. Agarwal, C. H. Tung, K. M. Hoe, S. R. Omampuliyur, D. Tripathi, A. O. Adeyeye, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, “Ultra-narrow silicon nanowire gate-all-around CMOS devices: impact of diameter channel-orientation and low temperature on device performance,” IEDM Tech. Dig 547–550, 1–4 (2006).

J. Appl. Phys.

A. S. Grove, O. Leistiko, and C. T. Sah, “Redistribution of acceptor and donor impurities during thermal oxidation of silicon,” J. Appl. Phys. 35(9), 2695–2701 (1964). [CrossRef]

Nano Lett.

L. Cao, J.-S. Park, P. Fan, B. Clemens, and M. L. Brongersma, “Resonant germanium nanoantenna photodetectors,” Nano Lett. 10(4), 1229–1233 (2010). [CrossRef] [PubMed]

Nat. Mater.

O. Hayden, R. Agarwal, and C. M. Lieber, “Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection,” Nat. Mater. 5(5), 352–356 (2006). [CrossRef] [PubMed]

Phys. Rev. B

G. Ding, C. T. Chan, Z. Q. Zhang, and P. Sheng, “Resonance-enhanced optical annealing of silicon nanowires,” Phys. Rev. B 71(20), 205302 (2005). [CrossRef]

Science

Y. Cui and C. M. Lieber, “Functional nanoscale electronic devices assembled using silicon nanowire building blocks,” Science 291(5505), 851–853 (2001). [CrossRef] [PubMed]

Sens. Actuators A Phys.

A. Agarwal, K. Buddharaju, I. K. Lao, N. Singh, N. Balasubramanian, and D. L. Kwong, “Silicon nanowire sensor array using top-down CMOS technology,” Sens. Actuators A Phys. 145–146, 207–213 (2008). [CrossRef]

Sens. Actuators B Chem.

X. T. Vu, R. GhoshMoulick, J. F. Eschermann, R. Stockmann, A. Offenhäusser, and S. Ingebrandt, “Fabrication and application of silicon nanowire transistor arrays for biomolecular detection,” Sens. Actuators B Chem. 144(2), 354–360 (2010). [CrossRef]

Other

C. F. Bohren and D. R. Huffman, Absorption and Scattering of Light by Small Particles (John Wiley & Sons, Inc., 1998).

2010, Vu, Sens. Actuators B Chem.
2010, Cao, Nano Lett.
2008, Agarwal, Sens. Actuators A Phys.
2008, Björk, Appl. Phys. Lett.
2006, Singh, IEDM Tech. Dig
2006, Hayden, Nat. Mater.
2005, Ding, Phys. Rev. B
2001, Cui, Science
1964, Grove, J. Appl. Phys.

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