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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 6 — Mar. 14, 2011
  • pp: 5464–5469

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

Yongshun Sun, Rusli, Mingbin Yu, Joe Salfi, Christina Souza, Harry E. Ruda, Navab Singh, Foo Kai Lin, Patrick Lo, and Dim Lee Kwong  »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5464-5469 (2011)

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P-i-n junctions were fabricated along Si nanowires (SiNWs) via the conventional top-down approach using optical lithography. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). The photodiodes exhibit very good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW. The photocurrent spectral response exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO2/Si cavity.

© 2011 OSA

OCIS Codes
(230.5170) Optical devices : Photodiodes
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:

Original Manuscript: November 24, 2010
Revised Manuscript: February 16, 2011
Manuscript Accepted: February 21, 2011
Published: March 8, 2011

Yongshun Sun, . Rusli, Mingbin Yu, Joe Salfi, Christina Souza, Harry E. Ruda, Navab Singh, Foo Kai Lin, Patrick Lo, and Dim Lee Kwong, "Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions," Opt. Express 19, 5464-5469 (2011)

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