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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 5811–5816

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

Yongbo Tang, Hui-Wen Chen, Siddharth Jain, Jonathan D. Peters, Urban Westergren, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 19, Issue 7, pp. 5811-5816 (2011)

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We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

© 2011 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: January 13, 2011
Revised Manuscript: February 25, 2011
Manuscript Accepted: March 4, 2011
Published: March 14, 2011

Yongbo Tang, Hui-Wen Chen, Siddharth Jain, Jonathan D. Peters, Urban Westergren, and John E. Bowers, "50 Gb/s hybrid silicon traveling-wave electroabsorption modulator," Opt. Express 19, 5811-5816 (2011)

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