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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 5993–6006

Characterization of high density through silicon vias with spectral reflectometry

Yi-Sha Ku, Kuo Cheng Huang, and Weite Hsu  »View Author Affiliations


Optics Express, Vol. 19, Issue 7, pp. 5993-6006 (2011)
http://dx.doi.org/10.1364/OE.19.005993


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Abstract

Measurement and control is an important step for production-worthy through silicon vias etch. We demonstrate the use and enhancement of an existing wafer metrology tool, spectral reflectometer by implementing novel theoretical model and measurement algorithm for high density through-silicon via (HDTSV) inspection. It is capable of measuring depth and depth variations of array vias by Discrete Fourier Transform (DFT) analysis in one shot measurement. Surface roughness of via bottom can also be extracted by scattering model fitting. Our non-destructive solution can measure TSV profile diameters as small as 5 μm and aspect ratios greater than 13:1. The measurement precision is in the range of 0.02 μm. Metrology results from actual 3D interconnect processing wafers are presented.

© 2011 OSA

OCIS Codes
(120.3940) Instrumentation, measurement, and metrology : Metrology
(300.6550) Spectroscopy : Spectroscopy, visible

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: October 14, 2010
Revised Manuscript: February 9, 2011
Manuscript Accepted: March 7, 2011
Published: March 17, 2011

Citation
Yi-Sha Ku, Kuo Cheng Huang, and Weite Hsu, "Characterization of high density through silicon vias with spectral reflectometry," Opt. Express 19, 5993-6006 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-5993


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References

  1. ITRS Assembly & Packaging2009.
  2. H. Singh, C. Rusu, and V. Vahedi, “Etch challenges for 3-D integration,” 3rd Workshop on Plasma Etch and Strip in Microelectronics 2010, Grenoble, France.
  3. M. Puech, J. M. Thevenoud, J. M. Gruffat, N. Launay, N. Arnal, and P. Godinat, “Fabrication of 3D packaging TSV using DRIE,” Symposium on Design, Test, Integrate ion and Packaging of MEMS/MOEMS, 2008.
  4. W. H. Teh, R. Caramto, J. Qureshi, S. Arkalgud, M. O’Brien, T. Gilday, K. Maekawa, T. Saito, K. Maruyama, T. Chidambaram, W. Wang, D. Marx, D. Grant, and R. Dudley, “A route towards production-worthy 5 μm x 25 μm and 1 μm x 20 μm non-Bosch through-silicon-via (TSV) etch, TSV metrology, and TSV integration,” IEEE 3DIC Conference, 2009.
  5. F. Liu, R. R. Yu, A. M. Young, J. P. Doyle, X. Wang, L. Shi, K.-N. Chen, X. Li, D. A. Dipaola, D. Brown, C. T. Ryan, J. A. Hagan, K. H. Wong, M. Lu, X. Gu, N. R. Klymko, E. D. Perfecto, A. G. Merryman, K. A. Kelly, S. Purushothaman, S. J. Koester, R. Wisnieff, and W. Haensch, “A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding,” Proc. International Electron Devices Meeting (IEDM) (2008) p. 599.
  6. M. Puech, J. M. Thevenoud, and J. M. Gruffat, “DRIE for MEMS devices,” Advanced Packaging, 2008.
  7. D. Marx, D. Grant, R. Dudley, A. Rudack, and W. H. Teh, “Wafer thickness sensor (WTS) for etch depth measurement of TSV,” IEEE International Conference on 3D System Integration, 2009.
  8. M. Knowles, “Optical metrology for TSV process control,” 3D Interconnect Metrology at SEMATECH Workshop during SEMICON West 2009.
  9. P. K. Schenck, D. L. Kaiser, and A. V. Davydov, “High throughput characterization of the optical properties of compositionally graded combinatorial films,” Appl. Surf. Sci. 223(1-3), 200–205 (2004). [CrossRef]
  10. Y. Feng, X. Zhang, B. Cheung, Z. Liu, M. Isao, and M. Hayashi, “OCD study of critical dimension and line-shape control of shallow-trench-isolation structures,” Proc. SPIE 5375, 1173–1182 (2004). [CrossRef]
  11. H. T. Huang and F. L. Terry., “Spectroscopic ellipsometry and reflectometry from gratings (scatterometry) for critical dimension measurement and in situ, real-time process monitoring,” Thin Solid Films 455–456, 828–836 (2004). [CrossRef]
  12. Y. S. Ku and F. S. Yang, “Reflectometer-based metrology for high-aspect ratio via measurement,” Opt. Express 18(7), 7269–7280 (2010). [CrossRef] [PubMed]
  13. H. E. Bennett and J. O. Porteus, “Relation between surface roughness and specular reflectance at normal incidence,” J. Opt. Soc. Am. 51(2), 123–129 (1961). [CrossRef]
  14. V. C. Venugopal and A. J. Perry, “Method for in-situ monitoring of patterned substrate processing using reflectometry,” US patent 7019844.
  15. M. Bass, Handbook of Optics, 3rd ed. (McGraw-Hill, 2009) Vol. 4.
  16. K. C. Huang, “The study of high aspect ratio TSV metrology,” master thesis, National Tsing Hua University, 2010.
  17. ITRS Metrology 2007 ed.2007.
  18. R. A. Leitgeb, W. Drexler, A. Unterhuber, B. Hermann, T. Bajraszewski, T. Le, A. Stingl, and A. Fercher, “Ultrahigh resolution Fourier domain optical coherence tomography,” Opt. Express 12(10), 2156–2165 (2004). [CrossRef] [PubMed]

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