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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 6119–6124

Determination of the photocarrier diffusion length in intrinsic Ge nanowires

Yun-Sok Shin, Donghun Lee, Hyun-Seung Lee, Yong-Jun Cho, Cheol-Joo Kim, and Moon-Ho Jo  »View Author Affiliations


Optics Express, Vol. 19, Issue 7, pp. 6119-6124 (2011)
http://dx.doi.org/10.1364/OE.19.006119


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Abstract

We quantitatively determined the photocarrier diffusion length in intrinsic Ge nanowires (NWs) using scanning photocurrent microscopy. Specifically, the spatial mapping of one-dimensional decay in the photocurrent along the Ge NWs under the scanning laser beam (λ= 532 nm) was analyzed in a one-dimensional diffusion rate equation to extract the diffusion length of ~4-5 μm. We further attempt to determine the photocarrier lifetime under a finite bias across the Ge NWs, and discuss the role of surface scattering.

© 2011 OSA

OCIS Codes
(000.2190) General : Experimental physics
(040.5150) Detectors : Photoconductivity

ToC Category:
Detectors

History
Original Manuscript: January 11, 2011
Revised Manuscript: March 3, 2011
Manuscript Accepted: March 4, 2011
Published: March 17, 2011

Citation
Yun-Sok Shin, Donghun Lee, Hyun-Seung Lee, Yong-Jun Cho, Cheol-Joo Kim, and Moon-Ho Jo, "Determination of the photocarrier diffusion length in intrinsic Ge nanowires," Opt. Express 19, 6119-6124 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-6119


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