OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 6119–6124

Determination of the photocarrier diffusion length in intrinsic Ge nanowires

Yun-Sok Shin, Donghun Lee, Hyun-Seung Lee, Yong-Jun Cho, Cheol-Joo Kim, and Moon-Ho Jo  »View Author Affiliations

Optics Express, Vol. 19, Issue 7, pp. 6119-6124 (2011)

View Full Text Article

Enhanced HTML    Acrobat PDF (1199 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



We quantitatively determined the photocarrier diffusion length in intrinsic Ge nanowires (NWs) using scanning photocurrent microscopy. Specifically, the spatial mapping of one-dimensional decay in the photocurrent along the Ge NWs under the scanning laser beam (λ= 532 nm) was analyzed in a one-dimensional diffusion rate equation to extract the diffusion length of ~4-5 μm. We further attempt to determine the photocarrier lifetime under a finite bias across the Ge NWs, and discuss the role of surface scattering.

© 2011 OSA

OCIS Codes
(000.2190) General : Experimental physics
(040.5150) Detectors : Photoconductivity

ToC Category:

Original Manuscript: January 11, 2011
Revised Manuscript: March 3, 2011
Manuscript Accepted: March 4, 2011
Published: March 17, 2011

Yun-Sok Shin, Donghun Lee, Hyun-Seung Lee, Yong-Jun Cho, Cheol-Joo Kim, and Moon-Ho Jo, "Determination of the photocarrier diffusion length in intrinsic Ge nanowires," Opt. Express 19, 6119-6124 (2011)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. P. Bhattacharya, Semiconductor Optoelectronics Devices,” 2nd ed., (Prentice Hall, Upper Saddle River, NJ., 1996).
  2. C.-B. Jin, J.-E. Yang, and M.-H. Jo, “Shape-controlled growth of single-crystalline Ge nanostructures,” Appl. Phys. Lett. 88(19), 193105 (2006). [CrossRef]
  3. J.-E. Yang, C.-B. Jin, C.-J. Kim, and M.-H. Jo, “Band-Gap modulation in single-crystalline Si1-xGex nanowires,” Nano Lett. 6(12), 2679–2684 (2006). [CrossRef] [PubMed]
  4. Y. Ahn, J. Dunning, and J. Park, “Scanning Photocurrent Imaging and Electronic Band Studies In Silicon Nanowire Field Effect Transistors,” Nano Lett. 5(7), 1367–1370 (2005). [CrossRef] [PubMed]
  5. Y. Gu, J. P. Romankiewicz, J. K. David, J. L. Lensch, and L. J. Lauhon, “Quantitative Measurement of the Electron and Hole Mobility−Lifetime Products in Semiconductor Nanowires,” Nano Lett. 6(5), 948–952 (2006). [CrossRef]
  6. E. J. H. Lee, K. Balasubramanian, J. Dorfmuller, R. Vogelgesan, N. Fu, A. Mews, M. Burghard, and K. Kern, “Electronic-band-structure mapping of nanotube transistors by scanning photocurrent microscopy,” Small 3(12), 2038–2042 (2007). [CrossRef] [PubMed]
  7. J. E. Allen, E. R. Hemesath, and L. J. Lauhon, “Scanning Photocurrent Microscopy Analysis of Si Nanowire Field-Effect Transistors Fabricated by Surface Etching of the Channel,” Nano Lett. 9(5), 1903–1908 (2009). [CrossRef] [PubMed]
  8. J. Park, Y. H. Ahn, and C. Ruiz-Vargas, “Imaging of photocurrent generation and collection in single-layer graphene,” Nano Lett. 9(5), 1742–1746 (2009). [CrossRef] [PubMed]
  9. C.-J. Kim, H.-S. Lee, Y.-J. Cho, K. Kang, and M.-H. Jo, “Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors,” Nano Lett. 10(6), 2043–2048 (2010). [CrossRef] [PubMed]
  10. D. C. Look, “Schottky‐barrier profiling techniques in semiconductors: Gate current and parasitic resistance effects,” J. Appl. Phys. 57(2), 377–383 (1985). [CrossRef]
  11. X.-J. Hao, T. Tu, G. Cao, C. Zhou, H.-O. Li, G.-C. Guo, W. Y. Fung, Z. Ji, G.-P. Guo, and W. Lu, “Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires,” Nano Lett. 10(8), 2956–2960 (2010). [CrossRef] [PubMed]
  12. E. O. Johnson, “Measurement of Minority Carrier Lifetimes with the Surface Photovoltage,” J. Appl. Phys. 28(11), 1349–1353 (1957). [CrossRef]
  13. K. Vetter, “Recent Developments in the Fabrication and Operation of Germanium Detectors,” Annu. Rev. Nucl. Part. Sci. 57(1), 363–404 (2007). [CrossRef]
  14. R. P. Prasankumar, S. Choi, S. A. Trugman, S. T. Picraux, and A. J. Taylor, “Ultrafast Electron and Hole Dynamics in Germanium Nanowires,” Nano Lett. 8(6), 1619–1624 (2008). [CrossRef] [PubMed]
  15. R. H. Kingston, “Review of Germanium Surface Phenomena,” J. Appl. Phys. 27(2), 101–114 (1956). [CrossRef]
  16. R. H. Kingston and A. L. Mcwhorter, “Relaxation Time of Surface States on Germanium,” Phys. Rev. 103(3), 534–540 (1956). [CrossRef]
  17. J. Bardeen, R. E. Coovert, S. R. Morrison, J. R. Schriffer, and R. Sun, “Surface Conductance and the Field Effect on Germanium,” Phys. Rev. 104(1), 47–51 (1956). [CrossRef]
  18. T. Hanrath and B. A. Korgel, “Influence of Surface States on Electron Transport through Intrinsic Ge Nanowires,” J. Phys. Chem. B 109(12), 5518–5524 (2005). [CrossRef]
  19. C.-J. Kim, H.-S. Lee, Y.-J. Cho, J.-E. Yang, R. R. Lee, J. K. Lee, and M.-H. Jo, “On-Nanowire Band-Graded Si:Ge Photodetectors,” Adv. Mater. 23(8), 1025–1029 (2011). [CrossRef] [PubMed]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited