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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 6609–6615

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer

Xiao-Hui Tan, Sheng-Lin Ye, and Xu Liu  »View Author Affiliations


Optics Express, Vol. 19, Issue 7, pp. 6609-6615 (2011)
http://dx.doi.org/10.1364/OE.19.006609


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Abstract

We have developed a simple approach to fabricate wide band gap surface layer for Cu(In,Ga)Se2 (CIGS) thin film. The Cu depleted surface layer was reconstructed by an In-Ga-Se post deposition treatment at different temperatures, which was monitored by a light controlling method. A desirable Cu concentration in surface layer has been achieved after depositing a 80nm thick In-Ga-Se layer at 400°C and the corresponding device performance is remarkably improved compared with device without surface modification. Additionally, the excess Cu2- x Se phase on the surface could also be eliminated by this method in case of high Cu/(In+Ga).

© 2011 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(310.1860) Thin films : Deposition and fabrication
(310.3840) Thin films : Materials and process characterization
(350.6050) Other areas of optics : Solar energy

ToC Category:
Thin Films

History
Original Manuscript: December 23, 2010
Revised Manuscript: March 6, 2011
Manuscript Accepted: March 7, 2011
Published: March 23, 2011

Citation
Xiao-Hui Tan, Sheng-Lin Ye, and Xu Liu, "Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer," Opt. Express 19, 6609-6615 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-6609


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