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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 8 — Apr. 11, 2011
  • pp: 7062–7067

30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide

Ning-Ning Feng, Dazeng Feng, Shirong Liao, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 19, Issue 8, pp. 7062-7067 (2011)
http://dx.doi.org/10.1364/OE.19.007062


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Abstract

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45µm2, a total insertion loss of 2.5-5dB and an extinction ratio of 4-7.5dB over a wavelength range of 1610-1640nm with −4V pp bias. The estimated Δα/α value is in the range of 2-3.3. The 3dB bandwidth measurements show that the device is capable of operating at more than 30GHz. Clear eye-diagram openings at 12.5Gbps demonstrates large signal modulation at high transmission rate.

© 2011 OSA

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: January 4, 2011
Revised Manuscript: March 21, 2011
Manuscript Accepted: March 21, 2011
Published: March 29, 2011

Virtual Issues
Vol. 6, Iss. 5 Virtual Journal for Biomedical Optics

Citation
Ning-Ning Feng, Dazeng Feng, Shirong Liao, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide," Opt. Express 19, 7062-7067 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-8-7062


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