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30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguideNing-Ning Feng, Dazeng Feng, Shirong Liao, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari »View Author Affiliations
Ning-Ning Feng,1,*
Dazeng Feng,1
Shirong Liao,1
Xin Wang,1
Po Dong,1
Hong Liang,1
Cheng-Chih Kung,1
Wei Qian,1
Joan Fong,1
Roshanak Shafiiha,1
Ying Luo,2
Jack Cunningham,2
Ashok V. Krishnamoorthy,2
and Mehdi Asghari1
1Kotura Inc., 2630 Corporate Place, Monterey Park, California 91754, USA 2Sun Labs, Oracle, 9515 Towne Centre Drive, San Diego, California 92121, USA *Corresponding author: nfeng@kotura.com |
Optics Express, Vol. 19, Issue 8, pp. 7062-7067 (2011)
http://dx.doi.org/10.1364/OE.19.007062
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Abstract
We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45µm2, a total insertion loss of 2.5-5dB and an extinction ratio of 4-7.5dB over a wavelength range of 1610-1640nm with −4V pp bias. The estimated Δα/α value is in the range of 2-3.3. The 3dB bandwidth measurements show that the device is capable of operating at more than 30GHz. Clear eye-diagram openings at 12.5Gbps demonstrates large signal modulation at high transmission rate.
© 2011 OSA
OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators
ToC Category:
Optoelectronics
History
Original Manuscript: January 4, 2011
Revised Manuscript: March 21, 2011
Manuscript Accepted: March 21, 2011
Published: March 29, 2011
Virtual Issues
Vol. 6, Iss. 5 Virtual Journal for Biomedical Optics
Citation
Ning-Ning Feng, Dazeng Feng, Shirong Liao, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguide," Opt. Express 19, 7062-7067 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-8-7062
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References
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Ahn, D.
Apsel, A. B.
Asghari, M.
Basak, J.
Beals, M.
Bennett, B. R.
Bernardis, S.
Bowers, J. E.
Boyraz, O.
Camacho-Aguilera, R.
Cannon, D. D.
Carothers, D.
Cassan, E.
Chen, J.
Chen, Y.-K.
Cheng, J.
Chetrit, Y.
Ciftcioglu, B.
Cohen, O.
Cohen, R.
Conway, T.
Crozat, P.
Cunningham, J.
Cunningham, J. E.
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Danielson, D. T.
Dong, P.
El Melhaoui, L.
Fang, A. W.
Fédéli, J. M.
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Ge, Y.
Gill, D. M.
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- N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides,” Opt. Express 18(8), 7994–7999 (2010). [CrossRef] [PubMed]
- P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- N.-N. Feng, D. Feng, H. Liang, W. Qian, C.-C. Kung, J. Fong, and M. Asghari, “Low-loss polarization-insensitive silicon-on-insulator-based WDM filter for triplexer applications,” IEEE Photon. Technol. Lett. 20(23), 1968–1970 (2008). [CrossRef]
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- L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE 6125, 612502, 612502-10 (2006). [CrossRef]
- L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010). [CrossRef] [PubMed]
- N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides,” Opt. Express 18(8), 7994–7999 (2010). [CrossRef] [PubMed]
- A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009). [CrossRef]
- L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- S. Jongthammanurak, J. Liu, K. Wada, D. D. Cannon, D. T. Danielson, D. Pan, L. C. Kimerling, and J. Michel, “Large electro-optic effect in tensile strained Ge-on-Si films,” Appl. Phys. Lett. 89(16), 161115 (2006). [CrossRef]
- N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides,” Opt. Express 18(8), 7994–7999 (2010). [CrossRef] [PubMed]
- N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010). [CrossRef] [PubMed]
- P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484–22490 (2009). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010). [CrossRef] [PubMed]
- N.-N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm VπL integrated on 0.25μm silicon-on-insulator waveguides,” Opt. Express 18(8), 7994–7999 (2010). [CrossRef] [PubMed]
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