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Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications |
Optics Express, Vol. 19, Issue 8, pp. 7280-7288 (2011)
http://dx.doi.org/10.1364/OE.19.007280
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Abstract
The growth and performance of top-illuminated metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates using a step-graded InxGa1-xAs buffer is reported. The p-i-n photodetectors display a low room-temperature reverse bias dark current density of ~1.4×10−7 A/cm2 at −2 V. Responsivity and specific detectivity values of 0.72 A/W, 2.3×1012 cm·Hz1/2/W and 0.69 A/W, 2.2×1012 cm·Hz1/2/W are achieved for Yb:YAG (1030 nm) and Nd:YAG (1064 nm) laser wavelengths at −2 V, respectively. A high theoretical bandwidth-responsivity product of 0.21 GHz·A/W was estimated at 1064 nm. Device performance metrics for these GaAs substrate-based detectors compare favorably with those based on InP technology due to the close tuning of the detector bandgap to the target wavelengths, despite the presence of a residual threading dislocation density. This work demonstrates the great potential for high performance metamorphic near-infrared InGaAs detectors with optimally tuned bandgaps, which can be grown on GaAs substrates, for a wide variety of applications.
© 2011 OSA
OCIS Codes
(040.3060) Detectors : Infrared
(040.5160) Detectors : Photodetectors
(160.1890) Materials : Detector materials
(160.6000) Materials : Semiconductor materials
(140.3615) Lasers and laser optics : Lasers, ytterbium
ToC Category:
Detectors
History
Original Manuscript: December 14, 2010
Revised Manuscript: January 24, 2011
Manuscript Accepted: January 25, 2011
Published: March 31, 2011
Citation
K. Swaminathan, L.-M. Yang, T. J. Grassman, G. Tabares, A. Guzman, A. Hierro, M. J. Mills, and S. A. Ringel, "Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications," Opt. Express 19, 7280-7288 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-8-7280
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References
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