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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 8 — Apr. 11, 2011
  • pp: 7827–7832

Broadband terahertz imaging with highly sensitive silicon CMOS detectors

Franz Schuster, Dominique Coquillat, Hadley Videlier, Maciej Sakowicz, Frédéric Teppe, Laurent Dussopt, Benoît Giffard, Thomas Skotnicki, and Wojciech Knap  »View Author Affiliations

Optics Express, Vol. 19, Issue 8, pp. 7827-7832 (2011)

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This paper investigates terahertz detectors fabricated in a low-cost 130 nm silicon CMOS technology. We show that the detectors consisting of a nMOS field effect transistor as rectifying element and an integrated bow-tie coupling antenna achieve a record responsivity above 5 kV/W and a noise equivalent power below 10 pW/Hz0.5 in the important atmospheric window around 300 GHz and at room temperature. We demonstrate furthermore that the same detectors are efficient for imaging in a very wide frequency range from ~0.27 THz up to 1.05 THz. These results pave the way towards high sensitivity focal plane arrays in silicon for terahertz imaging.

© 2011 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(110.0110) Imaging systems : Imaging systems
(110.2970) Imaging systems : Image detection systems
(040.2235) Detectors : Far infrared or terahertz

ToC Category:

Original Manuscript: February 14, 2011
Revised Manuscript: March 11, 2011
Manuscript Accepted: March 24, 2011
Published: April 7, 2011

Franz Schuster, Dominique Coquillat, Hadley Videlier, Maciej Sakowicz, Frédéric Teppe, Laurent Dussopt, Benoît Giffard, Thomas Skotnicki, and Wojciech Knap, "Broadband terahertz imaging with highly sensitive silicon CMOS detectors," Opt. Express 19, 7827-7832 (2011)

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  1. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, “Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors,” Appl. Phys. Lett. 85(4), 675–677 (2004). [CrossRef]
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