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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 9 — Apr. 25, 2011
  • pp: 8546–8556

InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination

Yanli Zhao, Dongdong Zhang, Long Qin, Qi Tang, Rui Hua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu  »View Author Affiliations

Optics Express, Vol. 19, Issue 9, pp. 8546-8556 (2011)

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Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs–InP APDs with different thicknesses of multiplication layer. The effect of the diffusion process, the generation-recombination process, the tunneling process and the multiplication process on the total leakage current is discussed. A new empirical formula has been established to predict the optimal multiplication layer thickness of SAGCM APDs with dark current limited by generation-recombination at multiplication gain of 8.

© 2011 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: February 14, 2011
Revised Manuscript: March 28, 2011
Manuscript Accepted: April 10, 2011
Published: April 18, 2011

Yanli Zhao, Dongdong Zhang, Long Qin, Qi Tang, Rui Hua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu, "InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination," Opt. Express 19, 8546-8556 (2011)

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