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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S1 — Jan. 3, 2011
  • pp: A57–A63

InGaN-based light-emitting diodes with an embedded conical air-voids structure

Yu-Chieh Huang, Chia-Feng Lin, Sy-Hann Chen, Jing-Jie Dai, Guei-Miao Wang, Kun-Pin Huang, Kuei-Ting Chen, and Yi-Hsiang Hsu  »View Author Affiliations

Optics Express, Vol. 19, Issue S1, pp. A57-A63 (2011)

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The conical air-void structure of an InGaN light-emitting diode (LEDs) was formed at the GaN/sapphire interface to increase the light extraction efficiency. The fabrication process of the conical air-void structure consisted of a dry process and a crystallographic wet etching process on an undoped GaN layer, followed by a re-growth process for the InGaN LED structure. A higher light output power (1.54 times) and a small divergent angle (120°) were observed, at a 20mA operation current, on the treated LED structure when compared to a standard LED without the conical air-void structure. In this electroluminescence spectrum, the emission intensity and the peak wavelength varied periodically by corresponding to the conical air-void patterns that were measured through a 100nm-optical-aperture fiber probe. The conical air-void structure reduced the compressed strain at the GaN/sapphire interface by inducing the wavelength blueshift phenomenon and the higher internal quantum efficiency of the photoluminescence spectra for the treated LED structure.

© 2010 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 11, 2010
Revised Manuscript: December 7, 2010
Manuscript Accepted: December 8, 2010
Published: December 17, 2010

Yu-Chieh Huang, Chia-Feng Lin, Sy-Hann Chen, Jing-Jie Dai, Guei-Miao Wang, Kun-Pin Huang, Kuei-Ting Chen, and Yi-Hsiang Hsu, "InGaN-based light-emitting diodes with an embedded conical air-voids structure," Opt. Express 19, A57-A63 (2011)

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