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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S3 — May. 9, 2011
  • pp: A326–A330

Fabrication of GaAs subwavelength structure (SWS) for solar cell applications

Byung-Jae Kim and Jihyun Kim  »View Author Affiliations

Optics Express, Vol. 19, Issue S3, pp. A326-A330 (2011)

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We developed a novel GaAs subwavelength structure (SWS) as an antireflective layer for solar cell applications. The GaAs SWS patterns were fabricated by a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). The shape and height of the GaAs SWS were controlled by the diameter of the SiO2 nanospheres and the etching time. Various GaAs SWS were characterized by the reflectance spectra. The average reflectance of the polished GaAs substrate from 200nm to 800nm was 35.1%. However, the average reflectance of the tapered GaAs SWS was reduced to 0.6% due to scattering and moth-eye effects.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Original Manuscript: April 1, 2011
Manuscript Accepted: April 12, 2011
Published: April 21, 2011

Byung-Jae Kim and Jihyun Kim, "Fabrication of GaAs subwavelength structure (SWS) for solar cell applications," Opt. Express 19, A326-A330 (2011)

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