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Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDsXing Sheng, Lirong Zeng Broderick, Juejun Hu, Li Yang, Anat Eshed, Eugene A. Fitzgerald, Jurgen Michel, and Lionel C. Kimerling »View Author Affiliations
Xing Sheng,1,*
Lirong Zeng Broderick,1
Juejun Hu,2
Li Yang,3
Anat Eshed,1
Eugene A. Fitzgerald,1
Jurgen Michel,1
and Lionel C. Kimerling1
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA 3Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA *Corresponding author: shengx@mit.edu |
Optics Express, Vol. 19, Issue S4, pp. A701-A709 (2011)
http://dx.doi.org/10.1364/OE.19.00A701
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Abstract
We developed a high-index-contrast photonic structure for improving the light extraction efficiency of light-emitting diodes (LEDs) by a self-assembly approach. In this approach, a two-dimensional grating can be non-lithographically integrated on the top of virtually any types of LEDs with controlled structural parameters and material indices. As a proof of concept, our designed photonic structure was implemented on a GaAs double heterojunction LED. Using numerical electromagnetic simulations, we explored the effects of the structural parameters (the grating period, layer thickness and material indices) on the device performances, followed by fabrication through a self-assembled porous alumina as a template. Device simulation and experimental results indicate that an optimized high-index-contrast (a-Si / air) grating obtains a much larger efficiency increase than using a low-index SiO2 grating. In addition, the devices maintain a Lambertian radiation pattern with the self-assembled grating. This technique provides an effective and low-cost method for improving LED efficiency.
© 2011 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
ToC Category:
Light-Emitting Diodes
History
Original Manuscript: March 28, 2011
Revised Manuscript: May 13, 2011
Manuscript Accepted: May 16, 2011
Published: May 19, 2011
Citation
Xing Sheng, Lirong Zeng Broderick, Juejun Hu, Li Yang, Anat Eshed, Eugene A. Fitzgerald, Jurgen Michel, and Lionel C. Kimerling, "Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs," Opt. Express 19, A701-A709 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-S4-A701
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References
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- E. Schubert, Light Emitting Diodes, (Cambridge University Press, 2006).
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- E. Palik, Handbook of Optical Constants of Solids (Academic Press, 1998).
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- H. Masuda and K. Fukuda, “Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science 268(5216), 1466–1468 (1995), http://www.sciencemag.org/content/268/5216/1466.short . [CrossRef] [PubMed]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- H. Masuda and K. Fukuda, “Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science 268(5216), 1466–1468 (1995), http://www.sciencemag.org/content/268/5216/1466.short . [CrossRef] [PubMed]
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- H. Masuda and K. Fukuda, “Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science 268(5216), 1466–1468 (1995), http://www.sciencemag.org/content/268/5216/1466.short . [CrossRef] [PubMed]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
Adv. Mater. (Deerfield Beach Fla.)
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
Appl. Phys. Lett.
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
IEEE J. Sel. Top. Quantum Electron.
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
J. Display Technol.
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
J. Electrochem. Soc.
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
J. Opt. Soc. Am. A
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
Jpn. J. Appl. Phys.
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
Nat. Photonics
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
Phys. Rev. Lett.
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
Science
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- H. Masuda and K. Fukuda, “Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science 268(5216), 1466–1468 (1995), http://www.sciencemag.org/content/268/5216/1466.short . [CrossRef] [PubMed]
Other
- E. Palik, Handbook of Optical Constants of Solids (Academic Press, 1998).
- E. Schubert, Light Emitting Diodes, (Cambridge University Press, 2006).
2011, Sheng, Adv. Mater. (Deerfield Beach Fla.)
- X. Sheng, J. Liu, I. Kozinsky, A. M. Agarwal, J. Michel, and L. C. Kimerling, “Design and non-lithographic fabrication of light trapping structures for thin film silicon solar cells,” Adv. Mater. (Deerfield Beach Fla.) 23(7), 843–847 (2011), http://onlinelibrary.wiley.com/doi/10.1002/adma.201003217/abstract . [CrossRef]
- E. Matioli, E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, “High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals,” Appl. Phys. Lett. 96(3), 031108 (2010), http://link.aip.org/link/doi/10.1063/1.3293442 . [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics 4(4), 222–226 (2010), http://www.nature.com/nphoton/journal/v4/n4/abs/nphoton.2010.7.html . [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009), http://www.nature.com/nphoton/journal/v3/n3/full/nphoton.2009.21.html . [CrossRef]
- C. C. Liu, S. X. Lin, C. C. Wang, K. K. Chong, C. I. Hung, and M. P. Houng, “Light output enhancement of AlGaInP light emitting diodes with nanopores of anodic alumina,” Jpn. J. Appl. Phys. 48(8), 082102–082104 (2009), http://jjap.jsap.jp/link?JJAP/48/082102/ . [CrossRef]
- C. F. Lai, J. Y. Chi, H. C. Kuo, H. H. Yen, C. E. Lee, C. H. Chao, W. Y. Yeh, and T. C. Lu, “far-field and near-field distribution of GaN-based photonic crystal LEDs with guided mode extraction,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1234–1241 (2009), http://dx.doi.org/10.1109/JSTQE.2009.2015582 . [CrossRef]
- K. Kim, J. Choi, T. S. Bae, M. Jung, and D. H. Woo, “Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes,” Jpn. J. Appl. Phys. 46(No. 10A), 6682–6684 (2007), http://jjap.jsap.jp/link?JJAP/46/6682/ . [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007), http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-2-160 . [CrossRef]
- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006), http://link.aip.org/link/doi/10.1063/1.2337007 . [CrossRef]
- M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, “Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals,” Science 308(5726), 1296–1298 (2005), http://www.sciencemag.org/content/308/5726/1296 (abstract). [CrossRef] [PubMed]
- H. S. Yang, S. Y. Han, K. H. Baik, S. J. Pearton, and F. Ren, “Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes,” Appl. Phys. Lett. 86(10), 102104 (2005), http://link.aip.org/link/doi/10.1063/1.1882749 . [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004), http://link.aip.org/link/doi/10.1063/1.1645992 . [CrossRef]
- D. Delbeke, P. Bienstman, R. Bockstaele, and R. Baets, “Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode,” J. Opt. Soc. Am. A 19(5), 871–880 (2002), http://www.opticsinfobase.org/abstract.cfm?URI=josaa-19-5-871 . [CrossRef]
- A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett. 78(5), 563–565 (2001), http://link.aip.org/link/doi/10.1063/1.1342048 . [CrossRef]
- S. Fan, P. R. Villeneuve, J. D. Joannopoulos, and E. F. Schubert, “High extraction efficiency of spontaneous emission from slabs of photonic crystals,” Phys. Rev. Lett. 78(17), 3294–3297 (1997), http://link.aps.org/doi/10.1103/PhysRevLett.78.3294 . [CrossRef]
- T. Egawa, Y. Niwano, K. Fujita, K. Nitatori, T. Watanabe, T. Jimbo, and M. Umeno, “First fabrication of AlGaAs/GaAs double-heterostructure light-emitting diodes grown on GaAs(111)a substrates using only silicon dopant,” Jpn. J. Appl. Phys. 34(Part 1, No. 2B), 1270–1272 (1995), http://jjap.jsap.jp/link?JJAP/34/1270/ . [CrossRef]
- H. Masuda and K. Fukuda, “Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science 268(5216), 1466–1468 (1995), http://www.sciencemag.org/content/268/5216/1466.short . [CrossRef] [PubMed]
- I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures,” Appl. Phys. Lett. 62(2), 131–133 (1993), http://link.aip.org/link/doi/10.1063/1.109348 . [CrossRef]
- C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAs1−xPx diodes,” J. Electrochem. Soc. 116(2), 248–253 (1969), http://dx.doi.org/10.1149/1.2411807 . [CrossRef]
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