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Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arraysLiang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang »View Author Affiliations
Liang-Yi Chen,1
Hung-Hsun Huang,1
Chun-Hsiang Chang,1
Ying-Yuan Huang,1
Yuh-Renn Wu,1,2
and JianJang Huang1,2,*
1Graduate Institute of Photonics and Optoelectronics, Taiwan 2Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, 106, Taiwan *Corresponding author: jjhuang@cc.ee.ntu.edu.tw |
Optics Express, Vol. 19, Issue S4, pp. A900-A907 (2011)
http://dx.doi.org/10.1364/OE.19.00A900
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Abstract
Strain in the semiconductor light emitting layers has profound effect on the energy band structure and the optical properties of the light emitting diodes (LEDs). Here, we report the fabrication and characterization of GaN nanorod LED arrays. We found that the choice of nanorod passivation materials results in the variation of strain in the InGaN/GaN quantum wells, and thus the corresponding change of light emission properties. The results were further investigated by performing Raman measurement to understand the strain of nanorods with different passivation materials and by calculating the optical transition energy of the devices under the influence of strain-induced deformation potential and the piezoelectric polarization field.
© 2011 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
ToC Category:
Light-Emitting Diodes
History
Original Manuscript: March 7, 2011
Revised Manuscript: June 3, 2011
Manuscript Accepted: June 3, 2011
Published: July 1, 2011
Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express
Citation
Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang, "Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays," Opt. Express 19, A900-A907 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-S4-A900
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References
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Akasaki, I.
Amaro, H.
Barker, A. S.
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Bernardini, F.
Brandt, O.
Burrus, C. A.
Bykhovski, A. D.
Calarco, R.
Chang, C. H.
Chang, H. J.
Chao, C. L.
Chemla, D. S.
Chen, C. P.
Chen, H. H.
Chen, L. C.
Chen, L. Y.
Chen, T. T.
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Smirnov, M. B.
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Vekshin, V. A.
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- S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy,” Phys. Rev. B 65(7), 075202 (2002). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
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- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
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- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
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- M. Y. Ke, C. Y. Wang, L. Y. Chen, H. H. Chen, H. L. Chiang, Y. W. Cheng, M. Y. Hsieh, C. P. Chen, and J. J. Huang, “Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays,” IEEE J. Sel. Top. Quant. 15(4), 1242–1249 (2009). [CrossRef]
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- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
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- Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009). [CrossRef]
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- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
- Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009). [CrossRef]
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
- H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free Indium Gallium Nitride/Gallium Nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004). [CrossRef]
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
- S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane wurtzite InGaN–GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007). [CrossRef]
- H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free Indium Gallium Nitride/Gallium Nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004). [CrossRef]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
- V. Y. Davydov, V. V. Emtsev, A. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, “Experimental and theoretical studies of phonons in hexagonal InN,” Appl. Phys. Lett. 75(21), 3297–3299 (1999). [CrossRef]
- V. Y. Davydov, V. V. Emtsev, A. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, “Experimental and theoretical studies of phonons in hexagonal InN,” Appl. Phys. Lett. 75(21), 3297–3299 (1999). [CrossRef]
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56(16), R10024–R10027 (1997). [CrossRef]
- D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN and InN,” Phys. Rev. B 67(23), 235205 (2003). [CrossRef]
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- A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, “Micro-Raman characterization of InxGa1−xN/GaN/Al2O3 heterostructures,” Phys. Rev. B 72(15), 155336 (2005). [CrossRef]
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- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). [CrossRef]
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
- L. Y. Chen, Y. Y. Huang, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, C. P. Chen, and J. J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010). [CrossRef] [PubMed]
- A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 36–43 (2006).
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). [CrossRef]
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). [CrossRef]
- N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth, “The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements,” Nano Lett. 6(4), 704–708 (2006). [CrossRef] [PubMed]
- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56(16), R10024–R10027 (1997). [CrossRef]
- V. Y. Davydov, V. V. Emtsev, A. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, “Experimental and theoretical studies of phonons in hexagonal InN,” Appl. Phys. Lett. 75(21), 3297–3299 (1999). [CrossRef]
- S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy,” Phys. Rev. B 65(7), 075202 (2002). [CrossRef]
- M. Y. Ke, C. Y. Wang, L. Y. Chen, H. H. Chen, H. L. Chiang, Y. W. Cheng, M. Y. Hsieh, C. P. Chen, and J. J. Huang, “Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays,” IEEE J. Sel. Top. Quant. 15(4), 1242–1249 (2009). [CrossRef]
- C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008). [CrossRef] [PubMed]
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
- Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009). [CrossRef]
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
- H. H. Huang and Y. R. Wu, “Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes,” J. Appl. Phys. 106(2), 023106 (2009). [CrossRef]
- Y. R. Wu and J. Singh, “Polar heterostructure for multifunction devices theoretical studies,” IEEE Trans. Electron. Dev. 52(2), 284–293 (2005). [CrossRef]
- Y. R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94(9), 5826–5831 (2003). [CrossRef]
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
Appl. Phys. Lett.
- Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009). [CrossRef]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007). [CrossRef]
- V. Y. Davydov, V. V. Emtsev, A. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, “Experimental and theoretical studies of phonons in hexagonal InN,” Appl. Phys. Lett. 75(21), 3297–3299 (1999). [CrossRef]
IEEE Electron Device Lett.
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
IEEE J. Quantum Electron.
- S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane wurtzite InGaN–GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007). [CrossRef]
IEEE J. Sel. Top. Quant.
- M. Y. Ke, C. Y. Wang, L. Y. Chen, H. H. Chen, H. L. Chiang, Y. W. Cheng, M. Y. Hsieh, C. P. Chen, and J. J. Huang, “Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays,” IEEE J. Sel. Top. Quant. 15(4), 1242–1249 (2009). [CrossRef]
IEEE Photon. Tech. L.
- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
IEEE Trans. Electron. Dev.
- Y. R. Wu and J. Singh, “Polar heterostructure for multifunction devices theoretical studies,” IEEE Trans. Electron. Dev. 52(2), 284–293 (2005). [CrossRef]
J. Appl. Phys.
- H. H. Huang and Y. R. Wu, “Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes,” J. Appl. Phys. 106(2), 023106 (2009). [CrossRef]
- Y. R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94(9), 5826–5831 (2003). [CrossRef]
- A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, “Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices,” J. Appl. Phys. 81(9), 6332–6338 (1997). [CrossRef]
Jpn. J. Appl. Phys.
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). [CrossRef]
Nano Lett.
- N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth, “The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements,” Nano Lett. 6(4), 704–708 (2006). [CrossRef] [PubMed]
- H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free Indium Gallium Nitride/Gallium Nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004). [CrossRef]
Nanotechnology
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
Opt. Express
- H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C. T. Liang, T. Y. Lin, S. C. Tseng, and L. C. Chen, “Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters,” Opt. Express 15(15), 9357–9365 (2007). [CrossRef] [PubMed]
- C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549–10556 (2008). [CrossRef] [PubMed]
- L. Y. Chen, Y. Y. Huang, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, C. P. Chen, and J. J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010). [CrossRef] [PubMed]
Phys. Rev. B
- A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, “Micro-Raman characterization of InxGa1−xN/GaN/Al2O3 heterostructures,” Phys. Rev. B 72(15), 155336 (2005). [CrossRef]
- S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy,” Phys. Rev. B 65(7), 075202 (2002). [CrossRef]
- D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN and InN,” Phys. Rev. B 67(23), 235205 (2003). [CrossRef]
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56(16), R10024–R10027 (1997). [CrossRef]
- A. S. Barker and M. Ilegems, “Infrared lattice vibrations and free-electron Dispersion in GaN,” Phys. Rev. B 7(2), 743–750 (1973). [CrossRef]
Phys. Rev. Lett.
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
Proc. SPIE
- A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 36–43 (2006).
2011, Sun, IEEE Electron Device Lett.
- Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing,” IEEE Electron Device Lett. 32(2), 182–184 (2011). [CrossRef]
- L. Y. Chen, Y. Y. Huang, C. H. Chang, Y. H. Sun, Y. W. Cheng, M. Y. Ke, C. P. Chen, and J. J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010). [CrossRef] [PubMed]
- Y. J. Lee, S. Y. Lin, C. H. Chiu, T. C. Lu, H. C. Kuo, S. C. Wang, S. Chhajed, J. K. Kim, and E. F. Schubert, “High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays,” Appl. Phys. Lett. 94(14), 141111 (2009). [CrossRef]
- M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, “Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays,” IEEE Photon. Tech. L. 21(4), 257–259 (2009). [CrossRef]
- M. Y. Ke, C. Y. Wang, L. Y. Chen, H. H. Chen, H. L. Chiang, Y. W. Cheng, M. Y. Hsieh, C. P. Chen, and J. J. Huang, “Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays,” IEEE J. Sel. Top. Quant. 15(4), 1242–1249 (2009). [CrossRef]
- H. H. Huang and Y. R. Wu, “Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes,” J. Appl. Phys. 106(2), 023106 (2009). [CrossRef]
- S. H. Park, D. Ahn, and S. L. Chuang, “Electronic and optical properties of a- and m-plane wurtzite InGaN–GaN quantum wells,” IEEE J. Quantum Electron. 43(12), 1175–1182 (2007). [CrossRef]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007). [CrossRef]
- C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007). [CrossRef]
- A. Kikuchi, M. Tada, K. Miwa, and K. Kishino, “Growth and characterization of InGaN/GaN nanocolumn LED,” Proc. SPIE 6129, 36–43 (2006).
- N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth, “The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements,” Nano Lett. 6(4), 704–708 (2006). [CrossRef] [PubMed]
- A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, “Micro-Raman characterization of InxGa1−xN/GaN/Al2O3 heterostructures,” Phys. Rev. B 72(15), 155336 (2005). [CrossRef]
- Y. R. Wu and J. Singh, “Polar heterostructure for multifunction devices theoretical studies,” IEEE Trans. Electron. Dev. 52(2), 284–293 (2005). [CrossRef]
- H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, “High-brightness light emitting diodes using dislocation-free Indium Gallium Nitride/Gallium Nitride multiquantum-well nanorod arrays,” Nano Lett. 4(6), 1059–1062 (2004). [CrossRef]
- D. Fritsch, H. Schmidt, and M. Grundmann, “Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN and InN,” Phys. Rev. B 67(23), 235205 (2003). [CrossRef]
- Y. R. Wu, M. Singh, and J. Singh, “Gate leakage suppression and contact engineering in nitride heterostructures,” J. Appl. Phys. 94(9), 5826–5831 (2003). [CrossRef]
- S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy,” Phys. Rev. B 65(7), 075202 (2002). [CrossRef]
- V. Y. Davydov, V. V. Emtsev, A. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, “Experimental and theoretical studies of phonons in hexagonal InN,” Appl. Phys. Lett. 75(21), 3297–3299 (1999). [CrossRef]
- A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, “Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices,” J. Appl. Phys. 81(9), 6332–6338 (1997). [CrossRef]
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56(16), R10024–R10027 (1997). [CrossRef]
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amaro, and I. Akasaki, “Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells,” Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382–L385 (1997). [CrossRef]
- D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984). [CrossRef]
- A. S. Barker and M. Ilegems, “Infrared lattice vibrations and free-electron Dispersion in GaN,” Phys. Rev. B 7(2), 743–750 (1973). [CrossRef]
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