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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S4 — Jul. 4, 2011
  • pp: A900–A907

Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang  »View Author Affiliations

Optics Express, Vol. 19, Issue S4, pp. A900-A907 (2011)

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Strain in the semiconductor light emitting layers has profound effect on the energy band structure and the optical properties of the light emitting diodes (LEDs). Here, we report the fabrication and characterization of GaN nanorod LED arrays. We found that the choice of nanorod passivation materials results in the variation of strain in the InGaN/GaN quantum wells, and thus the corresponding change of light emission properties. The results were further investigated by performing Raman measurement to understand the strain of nanorods with different passivation materials and by calculating the optical transition energy of the devices under the influence of strain-induced deformation potential and the piezoelectric polarization field.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Light-Emitting Diodes

Original Manuscript: March 7, 2011
Revised Manuscript: June 3, 2011
Manuscript Accepted: June 3, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang, "Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays," Opt. Express 19, A900-A907 (2011)

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