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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S4 — Jul. 4, 2011
  • pp: A937–A942

Design and fabrication of vertical-injection GaN-based light-emitting diodes

Hyunsoo Kim, Kyoung-Kook Kim, Sung-Nam Lee, and Kwang-Hyeon Baik  »View Author Affiliations


Optics Express, Vol. 19, Issue S4, pp. A937-A942 (2011)
http://dx.doi.org/10.1364/OE.19.00A937


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Abstract

The fabrication process and design issues for the fabrication of vertical-injection GaN-based light-emitting diodes were investigated. The process yield was reduced according to the adhesion of reflective p-electrodes, the exposure of electroplated metal in plasma, and wet-etching induced surface textures. The chip design utilizing current blocking layer and branched n-electrode was found to significantly affect the power efficiency of LEDs.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: March 21, 2011
Manuscript Accepted: June 9, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Citation
Hyunsoo Kim, Kyoung-Kook Kim, Sung-Nam Lee, and Kwang-Hyeon Baik, "Design and fabrication of vertical-injection GaN-based light-emitting diodes," Opt. Express 19, A937-A942 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-S4-A937


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