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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S4 — Jul. 4, 2011
  • pp: A943–A948

High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

Chu-Young Cho, Min-Ki Kwon, Il-Kyu Park, Sang-Hyun Hong, Jae-Joon Kim, Seong-Eun Park, Sung-Tae Kim, and Seong-Ju Park  »View Author Affiliations

Optics Express, Vol. 19, Issue S4, pp. A943-A948 (2011)

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We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Light-Emitting Diodes

Original Manuscript: March 30, 2011
Revised Manuscript: June 23, 2011
Manuscript Accepted: June 23, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Chu-Young Cho, Min-Ki Kwon, Il-Kyu Park, Sang-Hyun Hong, Jae-Joon Kim, Seong-Eun Park, Sung-Tae Kim, and Seong-Ju Park, "High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask," Opt. Express 19, A943-A948 (2011)

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