High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

doi:10.1364/OE.19.00A949

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang »View Author Affiliations

Optics Express, Vol. 19, Issue S4, pp. A949-A955 (2011)
http://dx.doi.org/10.1364/OE.19.00A949

View Full Text Article

Enhanced HTML Acrobat PDF (978 KB)

Journal Search
Article Lookup

Article Tools

Citations

Alert me when this article is cited
Export Citation/Save

Abstract
Article Info
References (17)
Cited By
Figures (7)
Metrics
Related Content

Abstract

GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: April 7, 2011
Revised Manuscript: June 16, 2011
Manuscript Accepted: June 17, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Citation
Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang, "High-efficiency InGaN-based LEDs grown on patterned sapphire substrates," Opt. Express 19, A949-A955 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-S4-A949

Sort: Author | Year | Journal | Reset

References

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002). [CrossRef]
C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000). [CrossRef]
W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006). [CrossRef]
H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008). [CrossRef] [PubMed]
T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009). [CrossRef]
K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008). [CrossRef]
H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]
H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010). [CrossRef]
H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008). [CrossRef]
J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007). [CrossRef]
H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002). [CrossRef]
Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010). [CrossRef]
J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010). [CrossRef]
S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997). [CrossRef]
L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001). [CrossRef]
T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007). [CrossRef] [PubMed]

Carr, E. C.
Chang, C. J.
Chang, J. Y.
Chang, S. J.
Chao, C. W.
Chen, C. H.
Chen, L. C.
Chen, W. C.
Cheng, J. H.
Chi, G. C.
Chi, S. W. S.
Chien, W. T.
Chiu, C. H.
Chyi, J. I.
Deguchi, K.
DenBaars, S. P.
Erikson, H. I.
Fini, P.
Gao, H. Y.
Gao, K. F.
Girolami, G.
Hsu, H. C.
Hsu, T. C.
Huang, H. W.
Huang, J. J.
Huh, C.
Kannappan, S.
Keller, S.
Kim, D. J.
Kim, H. S.
Kim, M. D.
Kim, S. W.
Kim, Y. H.
Kuo, C. H.
Kuo, H. C.
Lai, C. F.
Lee, B. D.
Lee, C. M.
Lee, C. R.
Lee, G. Y.
Lee, I. H.
Lee, J. M.
Lee, K. T.
Lee, S. H.
Lee, T. X.
Lee, Y. C.
Leung, K. M.
Li, J. M.
Liao, W. C.
Lin, B. W.
Lin, C. H.
Lin, H. C.
Lin, R. S.
Liu, H. H.
Liu, T. C.
Lu, C. M.
Lu, T. C.
Ludowise, M. J.
McCarthy, L.
Mishra, U. K.
Mitani, T.
Mukai, T.
Narukawa, Y.
Niki, I.
Noh, Y. K.
Oh, J. E.
Pan, C. J.
Park, S. J.
Peng, W. C.
Rodwell, M. J. W.
Rosner, S. J.
Ruh, H.
Sano, M.
Seol, K. W.
Shen, K. C.
Sheu, J. K.
Shiao, W. Y.
Shioji, S.
Smorchkova, I.
Song, J. C.
Sonobe, S.
Speck, J.
Su, Y. K.
Sun, C. C.
Tang, T. Y.
Ting, S. Y.
Wang, G. H.
Wang, S. C.
Wang, T. C.
Wu, L. W.
Wu, Y. S.
Xing, H.
Yamada, M.
Yan, F. W.
Yang, C. C.
Yao, C. L.
Yeh, J. H.
Yu, C. C.
Zeng, Y. P.
Zhang, Y.

Appl. Phys. Lett.

W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006). [CrossRef]
J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010). [CrossRef]
S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997). [CrossRef]
L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001). [CrossRef]

IEEE Photon. Technol. Lett.

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002). [CrossRef]
H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008). [CrossRef]

J. Appl. Phys.

T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009). [CrossRef]
C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000). [CrossRef]
Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010). [CrossRef]

J. Cryst. Growth

J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007). [CrossRef]

J. Electrochem. Soc.

K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008). [CrossRef]
H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010). [CrossRef]

Jpn. J. Appl. Phys.

M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002). [CrossRef]

Nanotechnology

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008). [CrossRef] [PubMed]

Opt. Express

T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007). [CrossRef] [PubMed]

Solid-State Electron.

H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]

Other

H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).

2010, Lin, J. Electrochem. Soc.
2010, Kim, J. Appl. Phys.
2010, Cheng, Appl. Phys. Lett.
2009, Tang, J. Appl. Phys.
2008, Lee, J. Electrochem. Soc.
2008, Gao, Solid-State Electron.
2008, Lin, IEEE Photon. Technol. Lett.
2008, Huang, Nanotechnology
2007, Song, J. Cryst. Growth
2007, Lee, Opt. Express
2006, Peng, Appl. Phys. Lett.
2002, Sheu, IEEE Photon. Technol. Lett.
2002, Yamada, Jpn. J. Appl. Phys.
2001, McCarthy, Appl. Phys. Lett.
2000, Huh, J. Appl. Phys.
1997, Rosner, Appl. Phys. Lett.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Click here to see a list of articles that cite this paper

Figures


Fig. 1	Fig. 2	Fig. 3


Fig. 4	Fig. 5	Fig. 6


Fig. 7

« Previous Article | Next Article »

OSA is a member of CrossRef.

[1] J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002). [CrossRef]

[2] C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000). [CrossRef]

[3] W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006). [CrossRef]

[4] H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008). [CrossRef] [PubMed]

[5] T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009). [CrossRef]

[6] K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008). [CrossRef]

[7] H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]

[8] H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010). [CrossRef]

[9] H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008). [CrossRef]

[10] J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007). [CrossRef]

[11] H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).

[12] M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002). [CrossRef]

[13] Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010). [CrossRef]

[14] J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010). [CrossRef]

[15] S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997). [CrossRef]

[16] L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001). [CrossRef]

[17] T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007). [CrossRef] [PubMed]

OpticsInfoBase

Energy Express

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates