OSA's Digital Library

Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S4 — Jul. 4, 2011
  • pp: A949–A955

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang  »View Author Affiliations

Optics Express, Vol. 19, Issue S4, pp. A949-A955 (2011)

View Full Text Article

Enhanced HTML    Acrobat PDF (978 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: April 7, 2011
Revised Manuscript: June 16, 2011
Manuscript Accepted: June 17, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang, "High-efficiency InGaN-based LEDs grown on patterned sapphire substrates," Opt. Express 19, A949-A955 (2011)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, “White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,” IEEE Photon. Technol. Lett. 14(4), 450–452 (2002). [CrossRef]
  2. C. Huh, H. S. Kim, S. W. Kim, J. M. Lee, D. J. Kim, I. H. Lee, and S. J. Park, “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN,” J. Appl. Phys. 87(9), 4464–4466 (2000). [CrossRef]
  3. W. C. Peng and Y. S. Wu, “Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate,” Appl. Phys. Lett. 88(18), 181117 (2006). [CrossRef]
  4. H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu, and S. C. Wang, “Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography,” Nanotechnology 19(18), 185301 (2008). [CrossRef] [PubMed]
  5. T. Y. Tang, W. Y. Shiao, C. H. Lin, K. C. Shen, J. J. Huang, S. Y. Ting, T. C. Liu, C. C. Yang, C. L. Yao, J. H. Yeh, T. C. Hsu, W. C. Chen, H. C. Hsu, and L. C. Chen, “Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy,” J. Appl. Phys. 105(2), 023501 (2009). [CrossRef]
  6. K. T. Lee, Y. C. Lee, and J. Y. Chang, “Light extraction enhancement of gallium nitride epilayers with stripe pattern transferred from patterned sapphire substrate,” J. Electrochem. Soc. 155(9), H638–H641 (2008). [CrossRef]
  7. H. Y. Gao, F. W. Yan, Y. Zhang, J. M. Li, Y. P. Zeng, and G. H. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]
  8. H. C. Lin, H. H. Liu, G. Y. Lee, J. I. Chyi, C. M. Lu, C. W. Chao, T. C. Wang, C. J. Chang, and S. W. S. Chi, “Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition,” J. Electrochem. Soc. 157(3), H304–H307 (2010). [CrossRef]
  9. H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, “Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates,” IEEE Photon. Technol. Lett. 20(19), 1621–1623 (2008). [CrossRef]
  10. J. C. Song, S. H. Lee, I. H. Lee, K. W. Seol, S. Kannappan, and C. R. Lee, “Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001),” J. Cryst. Growth 308(2), 321–324 (2007). [CrossRef]
  11. H. Lin, S. Liu, X. S. Zhang, B. L. Liu, and X. C. Ren, “Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique,” Acta Phys. Sin-Ch. Ed. 58, 959–963 (2009).
  12. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(Part 2, No. 12B), L1431–L1433 (2002). [CrossRef]
  13. Y. H. Kim, H. Ruh, Y. K. Noh, M. D. Kim, and J. E. Oh, “Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study,” J. Appl. Phys. 107(6), 063501 (2010). [CrossRef]
  14. J. H. Cheng, Y. S. Wu, W. C. Liao, and B. W. Lin, “Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire,” Appl. Phys. Lett. 96(5), 051109 (2010). [CrossRef]
  15. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420–422 (1997). [CrossRef]
  16. L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra, “Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors,” Appl. Phys. Lett. 78(15), 2235 (2001). [CrossRef]
  17. T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007). [CrossRef] [PubMed]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited