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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S5 — Sep. 12, 2011
  • pp: A1104–A1108

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

XingXing Fu, Bei Zhang, XiangNing Kang, JunJing Deng, Chang Xiong, Tao Dai, XianZhe Jiang, TongJun Yu, ZhiZhong Chen, and Guo Yi Zhang  »View Author Affiliations

Optics Express, Vol. 19, Issue S5, pp. A1104-A1108 (2011)

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In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(160.5298) Materials : Photonic crystals

ToC Category:
Light-Emitting Diodes

Original Manuscript: May 16, 2011
Revised Manuscript: July 16, 2011
Manuscript Accepted: July 19, 2011
Published: August 1, 2011

XingXing Fu, Bei Zhang, XiangNing Kang, JunJing Deng, Chang Xiong, Tao Dai, XianZhe Jiang, TongJun Yu, ZhiZhong Chen, and Guo Yi Zhang, "GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template," Opt. Express 19, A1104-A1108 (2011)

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