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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S5 — Sep. 12, 2011
  • pp: A1109–A1116

Wafer-scale broadband antireflective silicon fabricated by metal-assisted chemical etching using spin-coating Ag ink

Chan Il Yeo, Young Min Song, Sung Jun Jang, and Yong Tak Lee  »View Author Affiliations

Optics Express, Vol. 19, Issue S5, pp. A1109-A1116 (2011)

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We report broadband antireflective disordered subwavelength structures (d-SWSs), which were fabricated on 4-inch silicon wafers by spin-coating Ag ink and metal-assisted chemical etching. The antireflection properties of the d-SWSs depend on its dimensions and heights, which were changed by the sintering temperature of the spin-coated Ag ink and etching time. The fabricated d-SWSs drastically reduced surface reflection over a wide range of wavelengths and incident angles, providing good surface uniformity. The d-SWSs with the most appropriate geometry for practical solar cell applications exhibit only 1.23% solar-weighted reflectance in the wavelength range of 300-1100 nm and average reflectance <5% up to an incident angle of 55° in the wavelength range of 300-2500 nm. This simple and low-cost nanofabrication method for antireflection could be of great importance in optical device applications because it allows mass production without any lithography processes or sophisticated equipment.

© 2011 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(160.4760) Materials : Optical properties
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Thin Films

Original Manuscript: June 14, 2011
Manuscript Accepted: June 30, 2011
Published: August 2, 2011

Chan Il Yeo, Young Min Song, Sung Jun Jang, and Yong Tak Lee, "Wafer-scale broadband antireflective silicon fabricated by metal-assisted chemical etching using spin-coating Ag ink," Opt. Express 19, A1109-A1116 (2011)

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