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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S5 — Sep. 12, 2011
  • pp: A1126–A1134

InGaN light emitting diodes with a laser-treated tapered GaN structure

Wan-Chun Huang, Chia-Feng Lin, Tsung-Han Hsieh, Sin-Han Chen, Ming-Shiou Lin, Kuei-Ting Chen, Chun-Min Lin, Sy-Hann Chen, and Pin Han  »View Author Affiliations

Optics Express, Vol. 19, Issue S5, pp. A1126-A1134 (2011)

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InGaN light-emitting diode (LED) structures get an air-void structure and a tapered GaN structure at the GaN/sapphire interface through a laser decomposition process and a lateral wet etching process. The light output power of the treated LED structure had a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities and peak wavelengths of the micro-photoluminescence spectra were varied periodically by aligning to the air-void (461.8nm) and the tapered GaN (459.5nm) structures. The slightly peak wavelength blueshift phenomenon of the EL and the PL spectra were caused by a partial compressed strain release at the GaN/sapphire interface when forming the tapered GaN structure. The relative internal quantum efficiency of the treated LED structure (70.3%) was slightly increased compared with a conventional LED (67.8%) caused by the reduction of the piezoelectric field in the InGaN active layer.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: April 18, 2011
Revised Manuscript: June 27, 2011
Manuscript Accepted: July 17, 2011
Published: August 9, 2011

Wan-Chun Huang, Chia-Feng Lin, Tsung-Han Hsieh, Sin-Han Chen, Ming-Shiou Lin, Kuei-Ting Chen, Chun-Min Lin, Sy-Hann Chen, and Pin Han, "InGaN light emitting diodes with a laser-treated tapered GaN structure," Opt. Express 19, A1126-A1134 (2011)

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