First-generation diode lasers produced stimulated emission from thick active regions consisting of a single semiconductor material. However, not long after epitaxial growth techniques advanced to the point of allowing thin heterostructure layers to be deposited with a high degree of control and precision, the quantum well laser was born. It soon became apparent that besides providing a valuable vehicle for studying fundamental quantum physics and optics in a solid state environment, quantum well diode lasers were also capable of dramatic performance improvements over their bulk counterparts. The lowering of threshold current densities was especially impressive.
© Optical Society of America
Focus Issue: Quantum well laser design
Original Manuscript: February 16, 1998
Published: February 16, 1998
I. Vurgaftman and J. Meyer, "Introduction," Opt. Express 2, 118-118 (1998)
|Alert me when this paper is cited|
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.