1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter

doi:10.1364/OE.20.000614

1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter

Takeshi Fujisawa, Shigeru Kanazawa, Kiyoto Takahata, Wataru Kobayashi, Takashi Tadokoro, Hiroyuki Ishii, and Fumiyoshi Kano »View Author Affiliations

Optics Express, Vol. 20, Issue 1, pp. 614-620 (2012)
http://dx.doi.org/10.1364/OE.20.000614

View Full Text Article

Enhanced HTML Acrobat PDF (1304 KB)

Journal Search
Article Lookup

Article Tools

Citations

Alert me when this article is cited
Export Citation/Save

Abstract
Article Info
References (10)
Cited By
Figures (10)
Metrics
Related Content

Abstract

A 1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large output power and low driving voltage is developed for 100GbE. A novel rear grating DFB laser is introduced to increase the output power of the laser while keeping the single mode lasing, which is desirable for a monolithic integration. Also, InGaAlAs-based electroabsorption modulators make very-low-driving-voltage operation possible due to their steep extinction curves. With the module, very clear 25-Gbit/s eye openings are obtained for four wavelengths with the driving voltage of only 0.5 V while securing the dynamic extinction ratio required by the system. These results indicate that the presented module is a promising candidate for energy-efficient future 100GbE transmitter.

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.3120) Optical devices : Integrated optics devices

ToC Category:
Waveguide and Opto-Electronic Devices

History
Original Manuscript: September 30, 2011
Manuscript Accepted: October 23, 2011
Published: December 23, 2011

Citation
Takeshi Fujisawa, Shigeru Kanazawa, Kiyoto Takahata, Wataru Kobayashi, Takashi Tadokoro, Hiroyuki Ishii, and Fumiyoshi Kano, "1.3-μm, 4 × 25-Gbit/s, EADFB laser array module with large-output-power and low-driving-voltage for energy-efficient 100GbE transmitter," Opt. Express 20, 614-620 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-1-614

Sort: Author | Year | Journal | Reset

References

http://www.ieee802.org/3/ba .
T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, and F. Kano, “25-Gbit/s 1.3-μm InGaAlAs-based electroabsorption modulator integrated with a DFB laser for metro-area (40 km) 100-Gbit/s Ethernet system,” Electron. Lett.45, 900–901 (2009).
S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, M. Aoki, N. Sasada, and K. Naoe, “High-speed EA-DFB laser for 40-G and 100-Gbps,” IEICE Trans. Electron., E92-C, 937–941 (2009).
T. Saito, T. Yamatoya, Y. Morita, E. Ishimura, C. Watatani, T. Aoyagi, and T. Ishikawa, “Clear eye opening 1.3μm-25/43Gbps EML with novel tensile-strained asymmetric QW absorption layer,” in Proc. ECOC, P.8.1.3 (2009)
H. Takahashi, T. Shimamura, T. Sugiyama, M. Kubota, and K. Nakamura, “High-power 25-Gb/s electroabsorption modulator integrated with a laser diode,” IEEE Photon. Technol. Lett.21(10), 633–635 (2009). [CrossRef]
T. Fujisawa, K. Takahata, T. Tadokoro, W. Kobayashi, A. Ohki, N. Fujiwara, S. Kanazawa, T. Yamanaka, and F. Kano, “Long-reach 100Gbit Ethernet light source based on 4×25-Gbit/s 1.3-μm InGaAlAs EADFB lasers,” IEICE Trans. on Electron., E94-C, 1167–1172 (2011).
T. Fujisawa, S. Kanazawa, H. Ishii, N. Nunoya, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “1.3-μm, 4×25-Gbit/s, monolithically integrated light source for metro area 100-Gbit/s Ethernet,” IEEE Photon. Technol. Lett.23, 356–358 (2011).
S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, and R. Iga,F. Kano and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron.17, 1191–1197 (2011).
J. Shimizu, M. Aoki, T. Tsuchiya, M. Shirai, A. Taike, T. Ohtoshi, and S. Tsuji, “Advantages of optical modulators with InGaAlAs/InGaAlAs MQW structure,” Electron. Lett.38(15), 821–822 (2002). [CrossRef]
H. Fukano, T. Yamanaka, M. Tamura, and T. Kondo, “Very-low-driving voltage electroabsorption modulators operating at 40Gb/s,” J. Lightwave Technol.24(5), 2219–2224 (2006). [CrossRef]

Akage, Y.
Aoki, M.
Arai, M.
Fujisawa, T.
Fujiwara, N.
Fukano, H.
Hayashi, H.
Iga, R.
Ishii, H.
Kanazawa, S.
Kano, F.
Kawaguchi, Y.
Kitatani, T.
Kobayashi, W.
Kondo, T.
Kubota, M.
Makino, S.
Nakamura, K.
Naoe, K.
Nunoya, N.
Ohki, A.
Ohtoshi, T.
Oohashi, H.
Sasada, N.
Shimamura, T.
Shimizu, J.
Shinoda, K.
Shiota, T.
Shirai, M.
Sugiyama, T.
Tadokoro, T.
Taike, A.
Takahashi, H.
Takahata, K.
Tamura, M.
Tanaka, S.
Tsuchiya, T.
Tsuji, S.
Tsuzuki, K.
Yamanaka, T.

Electron. Lett.

T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, and F. Kano, “25-Gbit/s 1.3-μm InGaAlAs-based electroabsorption modulator integrated with a DFB laser for metro-area (40 km) 100-Gbit/s Ethernet system,” Electron. Lett.45, 900–901 (2009).
J. Shimizu, M. Aoki, T. Tsuchiya, M. Shirai, A. Taike, T. Ohtoshi, and S. Tsuji, “Advantages of optical modulators with InGaAlAs/InGaAlAs MQW structure,” Electron. Lett.38(15), 821–822 (2002). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, and R. Iga,F. Kano and H. Oohashi, “A compact EADFB laser array module for a future 100-Gbit/s Ethernet transceiver,” IEEE J. Sel. Top. Quantum Electron.17, 1191–1197 (2011).

IEEE Photon. Technol. Lett.

T. Fujisawa, S. Kanazawa, H. Ishii, N. Nunoya, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “1.3-μm, 4×25-Gbit/s, monolithically integrated light source for metro area 100-Gbit/s Ethernet,” IEEE Photon. Technol. Lett.23, 356–358 (2011).
H. Takahashi, T. Shimamura, T. Sugiyama, M. Kubota, and K. Nakamura, “High-power 25-Gb/s electroabsorption modulator integrated with a laser diode,” IEEE Photon. Technol. Lett.21(10), 633–635 (2009). [CrossRef]

IEICE Trans. Electron., E

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, M. Aoki, N. Sasada, and K. Naoe, “High-speed EA-DFB laser for 40-G and 100-Gbps,” IEICE Trans. Electron., E92-C, 937–941 (2009).

IEICE Trans. on Electron., E

T. Fujisawa, K. Takahata, T. Tadokoro, W. Kobayashi, A. Ohki, N. Fujiwara, S. Kanazawa, T. Yamanaka, and F. Kano, “Long-reach 100Gbit Ethernet light source based on 4×25-Gbit/s 1.3-μm InGaAlAs EADFB lasers,” IEICE Trans. on Electron., E94-C, 1167–1172 (2011).

J. Lightwave Technol.

H. Fukano, T. Yamanaka, M. Tamura, and T. Kondo, “Very-low-driving voltage electroabsorption modulators operating at 40Gb/s,” J. Lightwave Technol.24(5), 2219–2224 (2006). [CrossRef]

Other

http://www.ieee802.org/3/ba .
T. Saito, T. Yamatoya, Y. Morita, E. Ishimura, C. Watatani, T. Aoyagi, and T. Ishikawa, “Clear eye opening 1.3μm-25/43Gbps EML with novel tensile-strained asymmetric QW absorption layer,” in Proc. ECOC, P.8.1.3 (2009)

2011, Fujisawa, IEICE Trans. on Electron., E
2011, Fujisawa, IEEE Photon. Technol. Lett.
2011, Kanazawa, IEEE J. Sel. Top. Quantum Electron.
2011, Kano, IEEE J. Sel. Top. Quantum Electron.
2009, Fujisawa, Electron. Lett.
2009, Makino, IEICE Trans. Electron., E
2009, Takahashi, IEEE Photon. Technol. Lett.
2006, Fukano, J. Lightwave Technol.
2002, Shimizu, Electron. Lett.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Click here to see a list of articles that cite this paper