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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 10484–10489

Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing

Hong-Shi Ling, Shiang-Yu Wang, Wei-Cheng Hsu, and Chien-Ping Lee  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 10484-10489 (2012)
http://dx.doi.org/10.1364/OE.20.010484


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Abstract

We report voltage-tunable 3-5 μm & 8-12 μm dual-band detection in the InAs/Al0.3Ga0.7As/In0.15Ga0.85As confinement-enhanced dots-in-a-well quantum dot infrared photodetectors. The capability in temperature sensing is also demonstrated. Distinct response peaks at 5.0 μm and 8.6 μm were observed in the photocurrent spectra with working temperature up to 140K. The two peaks correspond to the transition paths from the quantum dot ground state to the quantum well state and the quantum dot excited state, respectively. At 77K, the response ratio of the 8.6 μm peak over the 5.0 μm peak changes from 0.29 at −3V to 5.8 at + 4.8V. Excellent selectivity between the two peaks with bias voltage makes the device attractive for third-generation imaging systems with pixel-level multicolor functionality.

© 2012 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.5570) Detectors : Quantum detectors

ToC Category:
Sensors

History
Original Manuscript: February 1, 2012
Revised Manuscript: February 20, 2012
Manuscript Accepted: March 7, 2012
Published: April 20, 2012

Virtual Issues
Quantum Dots for Photonic Applications (2012) Optical Materials Express

Citation
Hong-Shi Ling, Shiang-Yu Wang, Wei-Cheng Hsu, and Chien-Ping Lee, "Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing," Opt. Express 20, 10484-10489 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-10484


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