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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11256–11270

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study

Behrooz Nakhkoob, Sagar Ray, and Mona M. Hella  »View Author Affiliations

Optics Express, Vol. 20, Issue 10, pp. 11256-11270 (2012)

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This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

© 2012 OSA

OCIS Codes
(060.0060) Fiber optics and optical communications : Fiber optics and optical communications
(130.0130) Integrated optics : Integrated optics
(230.0230) Optical devices : Optical devices
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Fiber Optics and Optical Communications

Original Manuscript: January 4, 2012
Revised Manuscript: March 9, 2012
Manuscript Accepted: April 2, 2012
Published: May 2, 2012

Behrooz Nakhkoob, Sagar Ray, and Mona M. Hella, "High speed photodiodes in standard nanometer scale CMOS technology: a comparative study," Opt. Express 20, 11256-11270 (2012)

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  1. M. Kavehrad, “Sustainable energy-efficient wireless applications using light,” IEEE Commun. Mag.48(12), 66–73 (2010). [CrossRef]
  2. N. Faramarzpour, M. J. Deen, S. Shirani, and Q. Fang, “Fully integrated single photon avalanche diode detector in standard CMOS .18 μm technology,” IEEE Trans. Electron. Dev.55(3), 760–767 (2008). [CrossRef]
  3. B. Ciftcioglu, J. Zhang, L. Zhang, J. R. Marciante, J. D. Zuegel, R. Sobolewski, and H. Wu, “Integrated silicon PIN photodiodes using deep N-Well in a standard .18 mum CMOS technology,” J. Lightwave Technol. 27(15), 3303–3313 (2009). [CrossRef]
  4. D. Lee, J. Han, G. Han, and S. M. Park, “An 8.5 Gb/s fully integrated CMOS optoelectronic receiver using slope-detection adaptive equalizer,” IEEE J. Solid-State Circuits45(12), 2861–2873 (2010). [CrossRef]
  5. S. Radovanović, A. J. Annema, and B. Nauta, “A 3-Gb/s optical receiver front-end in .18 μm CMOS,” IEEE J. Solid-State Circuits40(8), 1706–1717 (2005).
  6. F. Tavernier and M. S. J. Steyaert, “High speed optical receivers with integrated photodiode in 130 nm CMOS,” IEEE J. Solid-State Circuits44(10), 2856–2867 (2009). [CrossRef]
  7. S. B. Alexander, Optical Communication Receiver Design (SPIE Optical Engineering Press, 1997). [CrossRef]
  8. D. Coppee, M. Kuijk, and R. Vounckx, “Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips,” IEEE J. Sel. Top. Quantum Electron.4(6), 1040–1045 (1998). [CrossRef]
  9. S.-H. Huang, W.-Z. Chen, Y.-W. Chang, and Y.-T. Huang, “A 10-Gb/s OEIC with meshed Spatially-Modulated photo detector in .18- μm CMOS technology,” IEEE J. Solid-State Circuits46(5), 1158–1169 (2011). [CrossRef]
  10. J. Genoe, D. Coppee, J. H. Stiens, R. A. Vounckx, and M. Kuijk, “Calculation of the current response of the spatially modulated light CMOS detector” IEEE Trans. Electron. Dev.48(9), 1892–1902 (2001). [CrossRef]
  11. B. Razavi, Design of Integrated Circuits for Optical Communications (McGraw Hill, USA, 2003).
  12. H. Zimmermann, K. Kieschnick, T. Heide, and A. Ghazi, “Integrated high-speed, high-responsivity Photodiode in CMOS and BiCMOS technology,” in Proceeding of the 29th. European Solid-State Device Research Conference, (Feb. 1999), 332–335.
  13. T. K. Woodward and A. V. Krishnamoorthy, “1 Gbit/s integrated optical detectors and receivers in commerical CMOS technologies,” IEEE J. Sel. Top. Quantum Electron.5(2), 146–156 (1999). [CrossRef]
  14. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (John Wiley and Sons, NJ. USA, 2007).

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