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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11316–11320

An electrically pumped germanium laser

Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 11316-11320 (2012)
http://dx.doi.org/10.1364/OE.20.011316


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Abstract

Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm−3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.

© 2012 OSA

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3380) Lasers and laser optics : Laser materials
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.3130) Materials : Integrated optics materials

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 19, 2012
Revised Manuscript: April 24, 2012
Manuscript Accepted: April 27, 2012
Published: May 2, 2012

Citation
Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Lionel C. Kimerling, and Jurgen Michel, "An electrically pumped germanium laser," Opt. Express 20, 11316-11320 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-11316


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References

  1. D. J. Lockwood and L. Pavesi, Silicon Photonics (Springer-Verlag, 2004).
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  12. R. E. Camacho-Aguilera, Y. Cai, J. T. Bessette, D. Kita, L. C. Kimerling, and J. Michel, “High active carrier concentration in n-type, thin film Ge using delta-doping,” submitted for publication (2012).
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