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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11383–11388

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

M. Tassaert, H. J. S. Dorren, G. Roelkens, and O. Raz  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 11383-11388 (2012)
http://dx.doi.org/10.1364/OE.20.011383


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Abstract

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed.

© 2012 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(200.6015) Optics in computing : Signal regeneration

ToC Category:
Integrated Optics

History
Original Manuscript: January 6, 2012
Revised Manuscript: April 11, 2012
Manuscript Accepted: April 12, 2012
Published: May 3, 2012

Citation
M. Tassaert, H. J. S. Dorren, G. Roelkens, and O. Raz, "Passive InP regenerator integrated on SOI for the support of broadband silicon modulators," Opt. Express 20, 11383-11388 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-11383


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References

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