SiN_x-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiN_x PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiN_x-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiN_x-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

© 2012 OSA

1. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
2. E. Rangel, E. Matioli, Y.-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011). [CrossRef]
3. E. Matioli, S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals,” Appl. Phys. Lett.98(25), 251112 (2011). [CrossRef]
4. X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011). [CrossRef]
5. D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, “Effect of GaN microlens array on efficiency of GaN-based blue-light-emitting diodes,” Jpn. J. Appl. Phys.44(1), L18–L20 (2005). [CrossRef]
6. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Nitride deep-ultraviolet light-emitting diodes with microlens array,” Appl. Phys. Lett.86(17), 173504 (2005). [CrossRef]
7. S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011). [CrossRef]
8. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012). [CrossRef]
9. R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett.99(17), 171115 (2011). [CrossRef]
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11. J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
12. L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012). [CrossRef]
13. H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011). [CrossRef]
14. C.-H. Lu, C.-C. Lan, Y.-L. Lai, Y.-L. Li, and C.-P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011). [CrossRef]
15. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates,” IEEE Photon. Technol. Lett.18(10), 1152–1154 (2006). [CrossRef]
16. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett.89(16), 161105 (2006). [CrossRef]
17. Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, “GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy,” J. Cryst. Growth272(1-4), 327–332 (2004). [CrossRef]
18. X.-H. Huang, J.-P. Liu, J.-J. Kong, H. Yang, and H.-B. Wang, “High-efficiency InGaN-based LEDs grown on patterned sapphire substrates,” Opt. Express19(S4Suppl 4), A949–A955 (2011). [CrossRef] [PubMed]
19. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Phys. Status Solidi A188(1), 121–125 (2001). [CrossRef]
20. H. Y. Lin, Y. J. Chen, C. C. Chang, X. F. Li, S. C. Hsu, and C. Y. Liu, “Pattern-coverage effect on light extraction efficiency of GaN LED on patterned-sapphire substrate,” Electrochem. Solid-State Lett.15(3), H72–H74 (2012). [CrossRef]
21. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett.98(15), 151102 (2011). [CrossRef]
22. W. Cao, J. M. Biser, Y.-K. Ee, X.-H. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nanopatterned sapphire,” J. Appl. Phys.110(5), 053505 (2011). [CrossRef]
23. C.-C. Kao, Y.-K. Su, C.-L. Lin, and J.-J. Chen, “The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates,” Appl. Phys. Lett.97(2), 023111 (2010). [CrossRef]
24. T. Shinagawa, Y. Abe, H. Matsumoto, B. Li, K. Murakami, N. Okada, K. Tadatomo, M. Kannaka, and H. Fujii, “Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography,” Phys. Status Solidi C7(7-8), 2165–2167 (2010). [CrossRef]
25. K.-J. Byeon, S.-Y. Hwang, and H. Lee, “Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography,” Appl. Phys. Lett.91(9), 091106 (2007). [CrossRef]
26. L. J. Guo, “Recent progress in nanoimprint technology and its applications,” J. Phys. D Appl. Phys.37(11), R123–R141 (2004). [CrossRef]
27. F. S. Diana, A. David, I. Meinel, R. Sharma, C. Weisbuch, S. Nakamura, and P. M. Petroff, “Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure,” Nano Lett.6(6), 1116–1120 (2006). [CrossRef] [PubMed]
28. H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006). [CrossRef] [PubMed]
29. T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, “Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal,” Appl. Phys. Lett.94(2), 023101 (2009). [CrossRef]
30. M.-H. Wu and G. M. Whitesides, “Fabrication of arrays of two-dimensional micropatterns using microspheres as lenses for projection photolithography,” Appl. Phys. Lett.78(16), 2273–2275 (2001). [CrossRef]
31. M. De Vittorio, M. T. Todaro, T. Stomeo, R. Cingolani, D. Cojoc, and E. D. Fabrizio, “Two-dimensional photonic crystal waveguide obtained by e-beam direct writing of SU8-2000 photoresist,” Microelectron. Eng.73–74, 388–391 (2004). [CrossRef]
32. K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519(7), 2241–2246 (2011). [CrossRef]
33. S. Y. Hwang, H. Y. Jung, J.-H. Jeong, and H. Lee, “Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography,” Thin Solid Films517(14), 4104–4107 (2009). [CrossRef]
34. FullWAVE 6.1, Rsoft Design Group, Inc., http://www.rsoftdesign.com
35. C.-C. Wang, H. Ku, C.-C. Liu, K.-K. Chong, C.-I. Hung, Y.-H. Wang, and M.-P. Houng, “Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure,” Appl. Phys. Lett.91(12), 121109 (2007). [CrossRef]
36. K.-J. Byeon, H. Park, J.-Y. Cho, K.-Y. Yang, J. H. Baek, G. Y. Jung, and H. Lee, “Fabrication of photonic crystal structure on indium tin oxide electrode of GaN-based light-emitting diodes,” Phys. Status Solidi A208(2), 480–483 (2011). [CrossRef]
37. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, “Highly reliable nitride-based LEDs with SPS+ITO upper contacts,” IEEE J. Quantum Electron.39(11), 1439–1443 (2003). [CrossRef]
38. Y. Z. Chiou, “Leakage current analysis of nitride-based photodetectors by emission microscopy inspection,” IEEE Sens. J.8(9), 1506–1510 (2008). [CrossRef]

Adv. Funct. Mater.

• C.-H. Lu, C.-C. Lan, Y.-L. Lai, Y.-L. Li, and C.-P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011). [CrossRef]

Appl. Phys. Lett.

• Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett.98(15), 151102 (2011). [CrossRef]
• K.-J. Byeon, S.-Y. Hwang, and H. Lee, “Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography,” Appl. Phys. Lett.91(9), 091106 (2007). [CrossRef]
• T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, “Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal,” Appl. Phys. Lett.94(2), 023101 (2009). [CrossRef]
• M.-H. Wu and G. M. Whitesides, “Fabrication of arrays of two-dimensional micropatterns using microspheres as lenses for projection photolithography,” Appl. Phys. Lett.78(16), 2273–2275 (2001). [CrossRef]
• C.-C. Kao, Y.-K. Su, C.-L. Lin, and J.-J. Chen, “The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates,” Appl. Phys. Lett.97(2), 023111 (2010). [CrossRef]
• C.-C. Wang, H. Ku, C.-C. Liu, K.-K. Chong, C.-I. Hung, Y.-H. Wang, and M.-P. Houng, “Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure,” Appl. Phys. Lett.91(12), 121109 (2007). [CrossRef]
• E. Rangel, E. Matioli, Y.-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, “Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes,” Appl. Phys. Lett.98(8), 081104 (2011). [CrossRef]
• E. Matioli, S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, “Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals,” Appl. Phys. Lett.98(25), 251112 (2011). [CrossRef]
• M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Nitride deep-ultraviolet light-emitting diodes with microlens array,” Appl. Phys. Lett.86(17), 173504 (2005). [CrossRef]
• S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011). [CrossRef]
• R. M. Farrell, D. A. Haeger, P. S. Hsu, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett.99(17), 171115 (2011). [CrossRef]
• H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011). [CrossRef]
• D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, “Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template,” Appl. Phys. Lett.89(16), 161105 (2006). [CrossRef]

Electrochem. Solid-State Lett.

• H. Y. Lin, Y. J. Chen, C. C. Chang, X. F. Li, S. C. Hsu, and C. Y. Liu, “Pattern-coverage effect on light extraction efficiency of GaN LED on patterned-sapphire substrate,” Electrochem. Solid-State Lett.15(3), H72–H74 (2012). [CrossRef]

IEEE J. Quantum Electron.

• S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, “Highly reliable nitride-based LEDs with SPS+ITO upper contacts,” IEEE J. Quantum Electron.39(11), 1439–1443 (2003). [CrossRef]

IEEE Photon. Technol. Lett.

• Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates,” IEEE Photon. Technol. Lett.18(10), 1152–1154 (2006). [CrossRef]

IEEE Photonics J.

• X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011). [CrossRef]

IEEE Sens. J.

• Y. Z. Chiou, “Leakage current analysis of nitride-based photodetectors by emission microscopy inspection,” IEEE Sens. J.8(9), 1506–1510 (2008). [CrossRef]

J. Appl. Phys.

• J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011). [CrossRef]
• W. Cao, J. M. Biser, Y.-K. Ee, X.-H. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nanopatterned sapphire,” J. Appl. Phys.110(5), 053505 (2011). [CrossRef]

J. Cryst. Growth

• Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, “GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy,” J. Cryst. Growth272(1-4), 327–332 (2004). [CrossRef]

J. Phys. D Appl. Phys.

• L. J. Guo, “Recent progress in nanoimprint technology and its applications,” J. Phys. D Appl. Phys.37(11), R123–R141 (2004). [CrossRef]

Jpn. J. Appl. Phys.

• L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012). [CrossRef]
• D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, “Effect of GaN microlens array on efficiency of GaN-based blue-light-emitting diodes,” Jpn. J. Appl. Phys.44(1), L18–L20 (2005). [CrossRef]

Microelectron. Eng.

• M. De Vittorio, M. T. Todaro, T. Stomeo, R. Cingolani, D. Cojoc, and E. D. Fabrizio, “Two-dimensional photonic crystal waveguide obtained by e-beam direct writing of SU8-2000 photoresist,” Microelectron. Eng.73–74, 388–391 (2004). [CrossRef]

Nano Lett.

• F. S. Diana, A. David, I. Meinel, R. Sharma, C. Weisbuch, S. Nakamura, and P. M. Petroff, “Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure,” Nano Lett.6(6), 1116–1120 (2006). [CrossRef] [PubMed]

Nat. Photonics

• J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]

Opt. Express

• X.-H. Huang, J.-P. Liu, J.-J. Kong, H. Yang, and H.-B. Wang, “High-efficiency InGaN-based LEDs grown on patterned sapphire substrates,” Opt. Express19(S4Suppl 4), A949–A955 (2011). [CrossRef] [PubMed]
• H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011). [CrossRef] [PubMed]
• H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006). [CrossRef] [PubMed]

Phys. Status Solidi A

• K.-J. Byeon, H. Park, J.-Y. Cho, K.-Y. Yang, J. H. Baek, G. Y. Jung, and H. Lee, “Fabrication of photonic crystal structure on indium tin oxide electrode of GaN-based light-emitting diodes,” Phys. Status Solidi A208(2), 480–483 (2011). [CrossRef]
• K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Phys. Status Solidi A188(1), 121–125 (2001). [CrossRef]

Phys. Status Solidi C

• T. Shinagawa, Y. Abe, H. Matsumoto, B. Li, K. Murakami, N. Okada, K. Tadatomo, M. Kannaka, and H. Fujii, “Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography,” Phys. Status Solidi C7(7-8), 2165–2167 (2010). [CrossRef]

Semicond. Sci. Technol.

• R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, “Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices,” Semicond. Sci. Technol.27(2), 024001 (2012). [CrossRef]

Thin Solid Films

• K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519(7), 2241–2246 (2011). [CrossRef]
• S. Y. Hwang, H. Y. Jung, J.-H. Jeong, and H. Lee, “Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography,” Thin Solid Films517(14), 4104–4107 (2009). [CrossRef]

Other

• FullWAVE 6.1, Rsoft Design Group, Inc., http://www.rsoftdesign.com

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