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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11423–11432

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

Kyeong-Jae Byeon, Joong-Yeon Cho, Jinseung Kim, Hyoungwon Park, and Heon Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue 10, pp. 11423-11432 (2012)

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SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
(220.4241) Optical design and fabrication : Nanostructure fabrication
(230.5298) Optical devices : Photonic crystals

ToC Category:
Optical Devices

Original Manuscript: March 9, 2012
Revised Manuscript: April 26, 2012
Manuscript Accepted: April 27, 2012
Published: May 4, 2012

Kyeong-Jae Byeon, Joong-Yeon Cho, Jinseung Kim, Hyoungwon Park, and Heon Lee, "Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography," Opt. Express 20, 11423-11432 (2012)

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