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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11478–11486

Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators

Xuezhe Zheng, Ying Luo, Guoliang Li, Ivan Shubin, Hiren Thacker, Jin Yao, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 11478-11486 (2012)
http://dx.doi.org/10.1364/OE.20.011478


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Abstract

We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 μW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.

© 2012 OSA

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(130.3120) Integrated optics : Integrated optics devices
(190.1450) Nonlinear optics : Bistability
(200.4650) Optics in computing : Optical interconnects
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: March 7, 2012
Revised Manuscript: April 19, 2012
Manuscript Accepted: April 22, 2012
Published: May 4, 2012

Citation
Xuezhe Zheng, Ying Luo, Guoliang Li, Ivan Shubin, Hiren Thacker, Jin Yao, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy, "Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators," Opt. Express 20, 11478-11486 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-11478


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References

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