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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11529–11535

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission

Yongbo Tang, Jonathan D. Peters, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 20, Issue 10, pp. 11529-11535 (2012)

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A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

© 2012 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(250.4110) Optoelectronics : Modulators

ToC Category:

Original Manuscript: March 21, 2012
Revised Manuscript: April 26, 2012
Manuscript Accepted: April 26, 2012
Published: May 4, 2012

Yongbo Tang, Jonathan D. Peters, and John E. Bowers, "Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission," Opt. Express 20, 11529-11535 (2012)

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  1. D. A. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE88(6), 728–749 (2000). [CrossRef]
  2. Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett.19(20), 1691–1693 (2007). [CrossRef]
  3. X. S. Yao and L. Maleki, “Optoelectronic microwave oscillator,” J. Opt. Soc. Am. B13(8), 1725–1735 (1996). [CrossRef]
  4. D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
  5. N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide,” Opt. Express19(8), 7062–7067 (2011). [CrossRef] [PubMed]
  6. L. Alloatti, D. Korn, R. Palmer, D. Hillerkuss, J. Li, A. Barklund, R. Dinu, J. Wieland, M. Fournier, J. Fedeli, H. Yu, W. Bogaerts, P. Dumon, R. Baets, C. Koos, W. Freude, and J. Leuthold, “42.7 Gbit/s electro-optic modulator in silicon technology,” Opt. Express19(12), 11841–11851 (2011). [CrossRef] [PubMed]
  7. M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature474(7349), 64–67 (2011). [CrossRef] [PubMed]
  8. Y. Tang, H.-W. Chen, S. Jain, J. D. Peters, U. Westergren, and J. E. Bowers, “50 Gb/s hybrid silicon traveling-wave electroabsorption modulator,” Opt. Express19(7), 5811–5816 (2011). [CrossRef] [PubMed]
  9. D. Liang and J. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics4(8), 511–517 (2010). [CrossRef]
  10. H. H. Chang, Y. H. Kuo, R. Jones, A. Barkai, and J. E. Bowers, “Integrated hybrid silicon triplexer,” Opt. Express18(23), 23891–23899 (2010). [CrossRef] [PubMed]
  11. M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett.22(2), 70–72 (2010). [CrossRef]
  12. T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett.47(12), 708–710 (2011). [CrossRef]
  13. T. Tatsumi, K. Tanaka, S. Sawada, H. Fujita, and T. Abe, “1.3 μm, 56-Gbit/s EML Module target to 400GbE,” in Optical Fiber Communication Conference, OSA Technical Digest (Optical Society of America, 2012), paper OTh3F.4.
  14. M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett.39(9), 733–735 (2003). [CrossRef]
  15. R. Lewén, S. Irmscher, U. Westergren, L. Thylén, and U. Eriksson, “Segmented transmission-line electroabsorption modulators,” J. Lightwave Technol.22(1), 172–179 (2004). [CrossRef]
  16. Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun.281(20), 5177–5182 (2008). [CrossRef]
  17. D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials3(3), 1782–1802 (2010). [CrossRef]

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