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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11529–11535

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission

Yongbo Tang, Jonathan D. Peters, and John E. Bowers  »View Author Affiliations


Optics Express, Vol. 20, Issue 10, pp. 11529-11535 (2012)
http://dx.doi.org/10.1364/OE.20.011529


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Abstract

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

© 2012 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(250.4110) Optoelectronics : Modulators

ToC Category:
Optoelectronics

History
Original Manuscript: March 21, 2012
Revised Manuscript: April 26, 2012
Manuscript Accepted: April 26, 2012
Published: May 4, 2012

Citation
Yongbo Tang, Jonathan D. Peters, and John E. Bowers, "Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission," Opt. Express 20, 11529-11535 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-11529


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