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Vertical InGaN light-emitting diodes with a sapphire-face-up structure

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Abstract

Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dry-etching processes were performed for thinning the sapphire substrate instead of removing this substrate using the laser lift-off technique and the thinning process associated with the wafer-bonding technique to feature LEDs with a sapphire-face-up structure and vertical conduction property. Compared with conventional lateral GaN/sapphire-based LEDs, GaN/Si-based vertical LEDs exhibit higher light output power and less power degradation at a high driving current, which could be attributed to the fact that vertical LEDs behave in a manner similar to flip-chip GaN/sapphire LEDs with excellent heat conduction. In addition, with an injection current of 350 mA, the output power (or forward voltage) of fabricated vertical LEDs can be enhanced (or reduced) by a magnitude of 60% (or 5%) compared with conventional GaN/sapphire-based LEDs.

©2011 Optical Society of America

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Figures (4)

Fig. 1
Fig. 1 (a) Schematic vertical LED structure with Si substrate (b) schematic lateral LED structure with sapphire substrate (c) show typical cross-sections of scanning electron microscopy (SEM) images taken from the LED-II.
Fig. 2
Fig. 2 (a) Typical forward I-V and light-output power-current (L-I) characteristics of the experimental LEDs (b) reverse I-V characteristics of the experimental LEDs.
Fig. 3
Fig. 3 Emission wavelength against injection current for the LED-I and LED-II.
Fig. 4
Fig. 4 Typical AFM images taken from the sapphire surfaces of (a) LED-II and (b) LED-III.
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