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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 20, Iss. S1 — Jan. 2, 2012
  • pp: A119–A124

Vertical InGaN light-emitting diodes with a sapphire-face-up structure

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko  »View Author Affiliations

Optics Express, Vol. 20, Issue S1, pp. A119-A124 (2012)

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Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dry-etching processes were performed for thinning the sapphire substrate instead of removing this substrate using the laser lift-off technique and the thinning process associated with the wafer-bonding technique to feature LEDs with a sapphire-face-up structure and vertical conduction property. Compared with conventional lateral GaN/sapphire-based LEDs, GaN/Si-based vertical LEDs exhibit higher light output power and less power degradation at a high driving current, which could be attributed to the fact that vertical LEDs behave in a manner similar to flip-chip GaN/sapphire LEDs with excellent heat conduction. In addition, with an injection current of 350 mA, the output power (or forward voltage) of fabricated vertical LEDs can be enhanced (or reduced) by a magnitude of 60% (or 5%) compared with conventional GaN/sapphire-based LEDs.

© 2011 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: October 10, 2011
Revised Manuscript: December 8, 2011
Manuscript Accepted: December 13, 2011
Published: December 22, 2011

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, "Vertical InGaN light-emitting diodes with a sapphire-face-up structure," Opt. Express 20, A119-A124 (2012)

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