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Periodic Si nanopillar arrays by anodic aluminum oxide template and catalytic etching for broadband and omnidirectional light harvesting

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Abstract

Large-area, periodic Si nanopillar arrays (NPAs) with the periodicity of 100 nm and the diameter of 60 nm were fabricated by metal-assisted chemical etching with anodic aluminum oxide as a patterning mask. The 100-nm-periodicity NPAs serve an antireflection function especially at the wavelengths of 200~400 nm, where the reflectance is decreased to be almost tenth of the value of the polished Si (from 62.9% to 7.9%). These NPAs show very low reflectance for broadband wavelengths and omnidirectional light incidence, attributed to the small periodicity and the stepped refractive index of NPA layers. The experimental results are confirmed by theoretical calculations. Raman scattering intensity was also found to be significantly increased with Si NPAs. The introduction of this industrial-scale self-assembly methodology for light harvesting greatly advances the development of Si-based optical devices.

©2011 Optical Society of America

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Figures (6)

Fig. 1
Fig. 1 (a) The flowchart of experimental process for fabricating periodic Si NPAs. (b)-(e) SEM images of the corresponding experimental procedures.
Fig. 2
Fig. 2 (a) Total reflectance (b) specular reflectance (c) diffuse reflectance and (d) diffusion order ratio of polished Si and Si NPAs over the wavelength regions of 200~850 nm.
Fig. 3
Fig. 3 The time-averaged, normalized TE electric field distribution (|E|) of polished Si and Si NWAs simulated by FDTD analysis with the wavelength of 250 nm.
Fig. 4
Fig. 4 Optical properties of Si NWAs with 100 and 500 nm in Λ simulated by RCWA analysis with TE-polarized waves.
Fig. 5
Fig. 5 Specular reflectance as a function of AOI for unpolarized light with the wavelength of 250 nm.
Fig. 6
Fig. 6 Raman spectra of the Si NPAs and the polished Si.

Equations (1)

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n t sin θ m n i sin θ i = mλ Λ
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