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Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading

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Abstract

We present the enhancement of wall-plug efficiency in vertical InGaN/GaN light-emitting diodes (V-LEDs) by improved current spreading with a novel Al2O3 current blocking layer (CBL). The Al2O3 CBL deposited by electron-beam evaporation shows high transmittance and good corrosion resistance to acidic solutions. V-LEDs with an Al2O3 CBL show similar light output power but lower forward voltage as compared to those with a SiO2 CBL deposited by plasma-enhanced chemical vapor deposition. As a result, the wall-plug efficiency of V-LEDs with an Al2O3 CBL at 500 mA was improved by 5% as compared to those with a SiO2 CBL, and by 19% as compared to those without a CBL.

©2012 Optical Society of America

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Figures (5)

Fig. 1
Fig. 1 (a) Schematic illustration of V-LEDs fabricated with an Al2O3 CBL. (b) Optical microscopy image of V-LEDs with an Al2O3 CBL after laser lift-off (left) and EL image at 5 mA (right). The n-electrode was not deposited. (c) Simulated current density distribution in the active region with and without CBL at 500 mA. (d) Current density profiles along the dotted line from Fig. 1(c).
Fig. 2
Fig. 2 Light transmittance spectra of an Al2O3 (2000 Å) CBL deposited by electron-beam deposition and a SiO2 (2000 Å) CBL deposited by plasma-enhanced chemical vapor deposition.
Fig. 3
Fig. 3 Depth profiles of an Al2O3 (2000 Å) CBL before and after piranha solution and aqua regia treatments.
Fig. 4
Fig. 4 (a) Light output power of V-LEDs with and without CBL as a function of injection current. (b) Current-voltage (I-V) characteristics of V-LEDs with and without CBL. Inset table displays the forward voltage of the V-LEDs at 20, 350, and 500 mA.
Fig. 5
Fig. 5 Efficiency droop behavior of V-LEDs: Wall-plug efficiency of V-LEDs with and without CBL as a function of injection current.

Equations (1)

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L s = t n ideal kT ρ J 0 e ,
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