Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

Open Access Open Access

Abstract

Deep level defects in the multi-quantum well (MQW) region of InGaN/GaN light emitting diodes (LEDs) were investigated. InGaN quantum well and GaN quantum barrier defect states were distinguished using bias-dependent steady-state photocapacitance and deep level optical spectroscopy, and their possible physical origin and potential impact on LED performance is considered. Lighted capacitance-voltage measurements provided quantitative and nanoscale depth profiling of the deep level concentration within the MQW region. The concentration of every observed deep level varied strongly with depth in the MQW region, which indicates evolving mechanisms for defect incorporation during MQW growth.

©2012 Optical Society of America

Full Article  |  PDF Article
More Like This
Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park
Opt. Express 22(S4) A1164-A1173 (2014)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhengang Ju, Yun Ji, Zabu Kyaw, Xueliang Zhang, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Express 22(S3) A779-A789 (2014)

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, Z. S. Liu, J. J. Zhu, X. J. Li, X. G. He, J. P. Liu, L. Q. Zhang, H. Yang, Y. T. Zhang, and G. T. Du
Opt. Express 24(13) 13824-13831 (2016)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1 (a) CV and LCV curves for the LED and (b) apparent space-charge density extracted from the dark CV data. Vth = −1.7 V is indicated, corresponding to the bias point at which V > Vth depletes only the MQW region and V < Vth depletes into the n-GaN bulk.
Fig. 2
Fig. 2 (a) SSPC spectra as a function of applied bias. Arrows mark the onset of individual deep levels, found by distinct changes in slope. Onsets at 1.60 eV, 2.05 eV, 2.60 eV and 2.70 eV evident at V = Vth are assigned to deep levels in the MQW region. The 3.25 eV onset that occurs only when V < Vth is assigned to a deep level in the n-GaN bulk. (b) DLOS spectrum taken at −1.7 and −8 V.
Fig. 3
Fig. 3 Measured voltage shift versus apparent depletion depth for the QW-related Ec – 2.76 eV deep level. The ρ(xd) profile from Fig. 1(b) is also plotted to identify contributions from individual QWs.
Fig. 4
Fig. 4 Distribution of the deep level density in the MQW region.

Tables (1)

Tables Icon

Table 1 Summary of Deep Level Defect Location and Properties Listed by Vr Value Used for DLOS Analysis

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

ΔC=( N t Aε 2 N d x d )( x 2 2 x 1 2 x d 2 ).
V+ V b = q ε 0 x d x N d (x)x n t (x)dx ,
ΔV= q ε 0 x d x n t (x)dx .
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved