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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A856–A863

Temperature dependent optical properties of amorphous silicon for diode laser crystallization

Joachim Bergmann, Martin Heusinger, Gudrun Andrä, and Fritz Falk  »View Author Affiliations

Optics Express, Vol. 20, Issue S6, pp. A856-A863 (2012)

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The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(310.0310) Thin films : Thin films
(310.3840) Thin films : Materials and process characterization
(310.6860) Thin films : Thin films, optical properties

ToC Category:

Original Manuscript: July 26, 2012
Revised Manuscript: September 13, 2012
Manuscript Accepted: September 13, 2012
Published: September 28, 2012

Joachim Bergmann, Martin Heusinger, Gudrun Andrä, and Fritz Falk, "Temperature dependent optical properties of amorphous silicon for diode laser crystallization," Opt. Express 20, A856-A863 (2012)

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  1. F. Falk and G. Andrä, Solar Cells—Thin-Film Technologies (Intech 2011), Chap. 7: “Crystalline silicon thin film solar cells,” http://www.intechopen.com/books/solar-cells-thin-film-technologies .
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  12. X. Maeder, C. Niederberger, S. Christiansen, A. Bochmann, G. Andrä, A. Gawlik, F. Falk, and J. Michler, “Microstructure and lattice bending in polycrystalline laser-crystallized silicon thin films for photovoltaic applications,” Thin Solid Films519(1), 58–63 (2010). [CrossRef]
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