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Energy Express

  • Editor: Christian Seassal
  • Vol. 20, Iss. S6 — Nov. 5, 2012
  • pp: A991–A996

Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films

Dong-Ju Seo, Jae-Phil Shim, Sang-Bae Choi, Tae Hoon Seo, Eun-Kyung Suh, and Dong-Seon Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue S6, pp. A991-A996 (2012)

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InGaN based MQW solar cells have been fabricated with 4 different transparent top electrode structures: (1)- ITO 200 nm, (2)-ITO nano dots only, (3)-ITO nano dots on ITO 50 nm and (4)-ITO nano dots on ITO 100 nm. The solar cell with the ITO 50 nm on ITO nano dots under AM 1.5 conditions showed the best results: 2.3 V for Voc, 0.69 mA/cm2 for Jsc, 41.8% for peak EQE, and 0.91% for conversion efficiency. Efficiency improvement was possible due to the decreased reflectance achieved by the ITO nano dots covered with an ITO film with optimized thickness.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.6860) Thin films : Thin films, optical properties
(350.6050) Other areas of optics : Solar energy
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures
(240.6645) Optics at surfaces : Surface differential reflectance

ToC Category:

Original Manuscript: July 26, 2012
Revised Manuscript: September 3, 2012
Manuscript Accepted: October 7, 2012
Published: November 1, 2012

Dong-Ju Seo, Jae-Phil Shim, Sang-Bae Choi, Tae Hoon Seo, Eun-Kyung Suh, and Dong-Seon Lee, "Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films," Opt. Express 20, A991-A996 (2012)

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  1. S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High power InGaN single quantum well structure blue and violet light emitting diodes,” Appl. Phys. Lett.67(13), 1868–1870 (1995). [CrossRef]
  2. S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates,” Appl. Phys. Lett.72(16), 2014–2016 (1998). [CrossRef]
  3. O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett.91(13), 132117 (2007). [CrossRef]
  4. C. J. Neufeld, N. G. Toledo, S. C. Cruz, M. Iza, S. P. DenBaars, and U. K. Mishra, “High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap,” Appl. Phys. Lett.93(14), 143502 (2008). [CrossRef]
  5. E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, St. Keller, St. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett.98(2), 021102 (2011). [CrossRef]
  6. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1-xGaxN alloys,” Appl. Phys. Lett.80(25), 4741–4743 (2002). [CrossRef]
  7. S. I. Na, D. S. Han, S. S. Kim, J. H. Lim, J. Y. Kim, and S. J. Park, “Surface texturing of p-GaN layer for efficient GaN LED by maskless selective etching,” Phys. Status Solidi2(7c), 2916–2919 (2005). [CrossRef]
  8. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. Denbaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
  9. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wuu, “GaN based light emitting diodes with indium tin oxide texturing window layers using natural lithography,” Appl. Phys. Lett.86(22), 221101 (2005). [CrossRef]
  10. D. S. Leem, J. H. Cho, C. S. Sone, Y. J. Park, and T. Y. Seong, “Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes,” J. Appl. Phys.98(7), 076107 (2005). [CrossRef]
  11. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride based light emitting diodes with indium tin oxide electrode patterned by imprint lithography,” Appl. Phys. Lett.91(1), 013504 (2007). [CrossRef]
  12. R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, “Improved conversion efficiency of GaN/InGaN thin-film solar cells,” IEEE Electron Device Lett.30(7), 724–726 (2009). [CrossRef]
  13. S. Y. Bae, J. P. Shim, D. S. Lee, S. R. Jeon, and G. Namkoong, “Improved photovoltaic effects of a vertical-type InGaN/GaN multiple quantum well solar cell,” Jpn. J. Appl. Phys.50(9), 092301 (2011). [CrossRef]
  14. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, “Electrical effects of plasma damage in p-GaN,” Appl. Phys. Lett.75(17), 2569–2571 (1999). [CrossRef]
  15. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, C. W. Kuo, and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts,” Solid-State Electron.47(5), 849–853 (2003). [CrossRef]
  16. J. P. Shim, S. R. Jeon, Y. K. Jeong, and D. S. Lee, “Improved efficiency by using transparent contact layers in InGaN based p-i-n solar cells,” IEEE Electron Device Lett.31(10), 1140–1142 (2010). [CrossRef]
  17. H. Kim, J. S. Horwitz, G. Kushto, A. Pique´, Z. H. Kafafi, C. M. Gilmore, and D. B. Chrisey, “Effect of film thickness on the properties of indium tin oxide thin films,” J. Appl. Phys.88(10), 6021–6025 (2000). [CrossRef]
  18. J. P. Shim, M. H. Choe, S. R. Jeon, D. J. Seo, T. H. Lee, and D. S. Lee, “InGaN-based p-i-n solar cells with graphene electrodes,” Appl. Phys. Express4(5), 052302 (2011). [CrossRef]
  19. S. M. Huang, Y. Yao, C. Jin, Z. Sun, and Z. J. Dong, “Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts,” Displays29(3), 254–259 (2008). [CrossRef]
  20. D. S. Leem, T. H. Lee, and T. Y. Seong, “Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching,” Solid-State Electron.51(5), 793–796 (2007). [CrossRef]
  21. T. H. Seo, K. J. Lee, T. S. Oh, Y. S. Lee, H. Jeong, A. H. Park, H. Kim, Y. R. Choi, E. K. Suh, T. V. Cuong, V. H. Pham, J. S. Chung, and E. J. Kim, “Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode,” Appl. Phys. Lett.98(25), 251114 (2011). [CrossRef]
  22. B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Design and realization of wide-band-gap(~2.67ev) InGaN p-n junction solar cell,” IEEE Electron Device Lett.31(1), 32–34 (2010). [CrossRef]
  23. J. K. Sheu, C. C. Yang, S. J. Tu, K. H. Chang, M. L. Lee, W. C. Lai, and L. C. Peng, “Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers,” IEEE Electron Device Lett.30(3), 225–227 (2009). [CrossRef]
  24. C. J. Neufeld, S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. Denbaars, J. S. Speck, and U. K. Mishra, “Effect of doping and polarization on carrier collection in InGaN quantum well solar cells,” Appl. Phys. Lett.98(24), 243507 (2011). [CrossRef]

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