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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 11 — May. 21, 2012
  • pp: 11665–11672

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Alban Gassenq, Nannicha Hattasan, Laurent Cerutti, Jean Batiste Rodriguez, Eric Tournié, and Gunther Roelkens  »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 11665-11672 (2012)

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In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2µm.

© 2012 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.3060) Detectors : Infrared
(130.0130) Integrated optics : Integrated optics

ToC Category:

Original Manuscript: March 29, 2012
Revised Manuscript: April 27, 2012
Manuscript Accepted: April 27, 2012
Published: May 7, 2012

Alban Gassenq, Nannicha Hattasan, Laurent Cerutti, Jean Batiste Rodriguez, Eric Tournié, and Gunther Roelkens, "Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip," Opt. Express 20, 11665-11672 (2012)

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