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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 11 — May. 21, 2012
  • pp: 11806–11812

Improvement of modulation bandwidth in electroabsorption-modulated laser by utilizing the resonance property in bonding wire

Oh Kee Kwon, Young Tak Han, Yong Soon Baek, and Yun C. Chung  »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 11806-11812 (2012)

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We present and demonstrate a simple and cost-effective technique for improving the modulation bandwidth of electroabsorption-modulated laser (EML). This technique utilizes the RF resonance caused by the EML chip (i.e., junction capacitance) and bonding wire (i.e, wire inductance). We analyze the effects of the lengths of the bonding wires on the frequency responses of EML by using an equivalent circuit model. To verify this analysis, we package a lumped EML chip on the sub-mount and measure its frequency responses. The results show that, by using the proposed technique, we can increase the modulation bandwidth of EML from ~16 GHz to ~28 GHz.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.2090) Optical devices : Electro-optical devices

ToC Category:
Optical Devices

Original Manuscript: November 21, 2011
Revised Manuscript: January 9, 2012
Manuscript Accepted: January 9, 2012
Published: May 10, 2012

Oh Kee Kwon, Young Tak Han, Yong Soon Baek, and Yun C. Chung, "Improvement of modulation bandwidth in electroabsorption-modulated laser by utilizing the resonance property in bonding wire," Opt. Express 20, 11806-11812 (2012)

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