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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 11 — May. 21, 2012
  • pp: 12171–12176

Nanolasers grown on silicon-based MOSFETs

Fanglu Lu, Thai-Truong D. Tran, Wai Son Ko, Kar Wei Ng, Roger Chen, and Connie Chang-Hasnain  »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 12171-12176 (2012)

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We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits.

© 2012 OSA

OCIS Codes
(160.3380) Materials : Laser materials
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:

Original Manuscript: April 12, 2012
Revised Manuscript: May 6, 2012
Manuscript Accepted: May 6, 2012
Published: May 14, 2012

Virtual Issues
June 13, 2012 Spotlight on Optics

Fanglu Lu, Thai-Truong D. Tran, Wai Son Ko, Kar Wei Ng, Roger Chen, and Connie Chang-Hasnain, "Nanolasers grown on silicon-based MOSFETs," Opt. Express 20, 12171-12176 (2012)

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