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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 11 — May. 21, 2012
  • pp: 12473–12486

Polarization-controlled excitation of multilevel plasmonic nano-circuits using single silicon nanowire

Mohamed H. El Sherif, Osman S. Ahmed, Mohamed H. Bakr, and Mohamed A. Swillam  »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 12473-12486 (2012)

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We propose a surface plasmon polarization-controlled beam splitter based on plasmonic slot waveguides (PSWs). It couples light of different polarizations from a silicon nanowire into multilevel plasmonic networks. Two orthogonal PSWs are utilized as the guiding waveguides for each polarization. The proposed structure overcomes inherent polarization limitation in plasmonic structures by providing multilevel optical signal processing. This ability of controlling polarization can be exploited to achieve 3-D multilevel plasmonic circuits and polarization controlled chip to chip channel. Our device is of a compact size and a wide band operation. The device utilizes both quasi-TE and quasi-TM polarizations to allow for increased optical processing capability. The crosstalk is minimal between the two polarizations propagating in two different levels. We achieve good transmission efficiency at a wavelength of 1.55 µm for different polarizations. We analyze and simulate the structure using the FDTD method. The proposed device can be utilized in integrated chips for optical signal processing and optical computations.

© 2012 OSA

OCIS Codes
(230.4170) Optical devices : Multilayers
(240.6680) Optics at surfaces : Surface plasmons
(250.5403) Optoelectronics : Plasmonics
(130.5440) Integrated optics : Polarization-selective devices

ToC Category:
Optics at Surfaces

Original Manuscript: March 13, 2012
Revised Manuscript: April 30, 2012
Manuscript Accepted: May 4, 2012
Published: May 17, 2012

Mohamed H. El Sherif, Osman S. Ahmed, Mohamed H. Bakr, and Mohamed A. Swillam, "Polarization-controlled excitation of multilevel plasmonic nano-circuits using single silicon nanowire," Opt. Express 20, 12473-12486 (2012)

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