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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 11 — May. 21, 2012
  • pp: 12541–12549

Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells

A. Lupu, M. Tchernycheva, Y. Kotsar, E. Monroy, and F. H. Julien  »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 12541-12549 (2012)

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The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation of the refractive index was deduced from the shift of the position of the beating interference maxima of different order modes in a guided wave configuration. The obtained index variation with bias from complete depletion to full population of the quantum wells is around -5 × 10−3. This value is similar to the typical index variation achieved in InP and is an order of magnitude higher than the index variation obtained in silicon.

© 2012 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(160.4760) Materials : Optical properties
(260.6580) Physical optics : Stark effect
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

Original Manuscript: March 14, 2012
Revised Manuscript: April 9, 2012
Manuscript Accepted: April 9, 2012
Published: May 18, 2012

A. Lupu, M. Tchernycheva, Y. Kotsar, E. Monroy, and F. H. Julien, "Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells," Opt. Express 20, 12541-12549 (2012)

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