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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 12 — Jun. 4, 2012
  • pp: 12699–12709

Influence of self-absorption on plasma diagnostics by emission spectral lines

Evgueni Gudimenko, Vladimir Milosavljević, and Stephen Daniels  »View Author Affiliations

Optics Express, Vol. 20, Issue 12, pp. 12699-12709 (2012)

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Accurate optical emission spectroscopy (OES) measurements are necessary for plasma semiconductor processing and for optical emission analysis. In this paper we investigate the effects of self-absorption on the most important neutral Argon spectra lines. One of these Argon spectral lines (750 nm) is frequently used for actinometry. The experiment is performed in a reactive ion etch (RIE) capacitively coupled plasma (CCP) system. A comprehensive design of experiments has been created to establish all plasma conditions, power, pressure and gas flow rate which affect the Argon emission intensity by self-absorption. The results are then compared to theoretical calculated line ratios.

© 2012 OSA

OCIS Codes
(300.2140) Spectroscopy : Emission
(300.6170) Spectroscopy : Spectra
(300.6190) Spectroscopy : Spectrometers
(300.6210) Spectroscopy : Spectroscopy, atomic
(300.6320) Spectroscopy : Spectroscopy, high-resolution
(280.5395) Remote sensing and sensors : Plasma diagnostics

ToC Category:

Original Manuscript: April 19, 2012
Revised Manuscript: May 17, 2012
Manuscript Accepted: May 17, 2012
Published: May 21, 2012

Evgueni Gudimenko, Vladimir Milosavljević, and Stephen Daniels, "Influence of self-absorption on plasma diagnostics by emission spectral lines," Opt. Express 20, 12699-12709 (2012)

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