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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 12 — Jun. 4, 2012
  • pp: 12926–12938

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators

Hui Yu, Marianna Pantouvaki, Joris Van Campenhout, Dietmar Korn, Katarzyna Komorowska, Pieter Dumon, Yanlu Li, Peter Verheyen, Philippe Absil, Luca Alloatti, David Hillerkuss, Juerg Leuthold, Roel Baets, and Wim Bogaerts  »View Author Affiliations


Optics Express, Vol. 20, Issue 12, pp. 12926-12938 (2012)
http://dx.doi.org/10.1364/OE.20.012926


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Abstract

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

© 2012 OSA

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: April 12, 2012
Revised Manuscript: May 12, 2012
Manuscript Accepted: May 13, 2012
Published: May 23, 2012

Citation
Hui Yu, Marianna Pantouvaki, Joris Van Campenhout, Dietmar Korn, Katarzyna Komorowska, Pieter Dumon, Yanlu Li, Peter Verheyen, Philippe Absil, Luca Alloatti, David Hillerkuss, Juerg Leuthold, Roel Baets, and Wim Bogaerts, "Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators," Opt. Express 20, 12926-12938 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-12-12926


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