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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 12 — Jun. 4, 2012
  • pp: 13115–13122

Linearity of silicon ring modulators for analog optical links

Ali Ayazi, Tom Baehr-Jones, Yang Liu, Andy Eu-Jin Lim, and Michael Hochberg  »View Author Affiliations


Optics Express, Vol. 20, Issue 12, pp. 13115-13122 (2012)
http://dx.doi.org/10.1364/OE.20.013115


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Abstract

We study the nonlinear distortions of a silicon ring modulator based on the carrier depletion effect for analog links. Key sources of modulation nonlinearity are identified and modeled. We find that the most important source of nonlinearity is from the pn junction itself, as opposed to the nonlinear wavelength response of the ring modulator. Spurious free dynamic range for intermodulation distortion of as high as 84 dB.Hz2/3 is obtained.

© 2012 OSA

OCIS Codes
(040.6040) Detectors : Silicon
(130.0130) Integrated optics : Integrated optics
(130.2790) Integrated optics : Guided waves
(230.2090) Optical devices : Electro-optical devices
(250.7360) Optoelectronics : Waveguide modulators
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: March 9, 2012
Revised Manuscript: May 21, 2012
Manuscript Accepted: May 21, 2012
Published: May 25, 2012

Citation
Ali Ayazi, Tom Baehr-Jones, Yang Liu, Andy Eu-Jin Lim, and Michael Hochberg, "Linearity of silicon ring modulators for analog optical links," Opt. Express 20, 13115-13122 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-12-13115


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