Room temperature light emission from Ge self-assembled quantum dots (QDs) embedded in L3-type photonic crystal (PhC) nanocavity is successfully demonstrated under current injection through a lateral PIN diode structure. The Ge QDs are grown on silicon-on-insulator (SOI) wafer by solid-source molecular beam epitaxy (SS-MBE), and the PIN diode is fabricated by selective ion implantation around the PhC cavity. Under an injected current larger than 0.5 mA, strong resonant electroluminescence (EL) around 1.3–1.5 μm wavelength corresponding to the PhC cavity modes is observed. A sharp peak with a quality factor up to 260 is obtained in the EL spectrum. These results show a possible way to realize practical silicon-based light emitting devices.

© 2012 OSA

1. G. T. ReedSilicon Photonics: The State of the Art (J. Wiley & Sons, 2008). [CrossRef]
2. L. Tsybeskov, D. J. Lockwood, and M. Ichikawa“Silicon Photonics: CMOS Going Optical,” Proc. IEEE97, 1161–1165 (2009). [CrossRef]
3. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature (London)408, 440–444 (2000). [CrossRef]
4. D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si (100),” Appl. Phys. Lett.63, 3509–3511 (1993). [CrossRef]
5. R. Apetz, L. Vescan, A. Hartmann, C. Dieker, and H. Luth, “Photoluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett.66, 445–447 (1995). [CrossRef]
6. H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett.79, 4568–4570 (2001). [CrossRef]
7. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature (London)433, 292–294 (2005). [CrossRef]
8. S. Fukatsu, H. Sunamura, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett.71, 258–260 (1997). [CrossRef]
9. T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hemandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett.77, 1822–1824 (2000). [CrossRef]
10. E. M. Purcell, “Spontaneous emission probabilities at radio frequencies,” Phys. Rev.69, 681 (1946).
11. J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett.89, 201102 (2006). [CrossRef]
12. J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki, and N. Usami, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett.91, 011104 (2007). [CrossRef]
13. M. E. Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express16, 207–210 (2008).
14. J. Xia, Y. Takeda, N. Usami, and T. Maruizumi, “Room-temperature electroluminescence from Si microdisks with Ge quantum dots,” Opt. Express18, 13945–13950 (2010). [CrossRef] [PubMed]
15. H. G. Park, S. H. Kim, S. H. Kwon, Y. G. Ju, J. K. Yang, J. H. Baek, S. B. Kim, and Y. H. Lee, “Electrically driven single-cell photonic crystal laser,” Science305, 1444–1447 (2004). [CrossRef] [PubMed]
16. T. Tsuboi, X. Xu, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Room temperature electroluminescence from Ge quantum dots embedded in photonic crystal microcavities,” Appl. Phys. Express5, 052101 (2012). [CrossRef]
17. B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photon.5, 297–300 (2011). [CrossRef]
18. S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20, 3773–3780 (2012). [CrossRef] [PubMed]
19. J. ZieglerSRIM The Stopping and Range of Ions in Matter, Version 2008.03, http://www.srim.org .
20. A. Mokhberi, P. B. Griffin, J. D. Plummer, E. Paton, S. McCoy, and K. Elliot, “A comparative study of dopant activation in Boron, BF2, Arsenic, and Phosphorus implanted silicon,” IEEE Trans. Electron Dev.49, 1183–1191 (2002). [CrossRef]
21. RSoft FullWAVE, RSoft Design Group, Inc., http://www.rsoftdesign.com .
22. Y. Tanaka, T. Asano, R. Hatsuta, and S. Noda, “Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding,” Appl. Phys. Lett.88, 011112 (2006). [CrossRef]
23. S. Iwamoto, Y. Arakawa, and A. Gomyo, “Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature,” Appl. Phys. Lett.91, 211104 (2007). [CrossRef]
24. S. Nakayama, S. Ishida, S. Iwamoto, and Y. Arakawa, “Effect of cavity mode volume on the photoluminescence from silicon photonic crystal nanocavities,” Appl. Phys. Lett.98, 171102 (2011). [CrossRef]
25. N. Tran, S. Combrie, P. Colman, A. D. Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B82, 075120 (2010). [CrossRef]
26. B. J. Frey, D. B. Leviton, and T. J. Madison, “Temperature-dependent refractive index of silicon and germanium,” Proc. SPIE6273, 62732J (2006). [CrossRef]
27. S. Cheng, J. Lu, G. Shambat, H. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express17, 10019–10024 (2009). [CrossRef] [PubMed]
28. M. El Kurdi, S. David, P. Boucaud, C. Kammerer, X. Li, V. Le Thanh, S. Sauvage, and J.-M. Lourtioz, “Strong 1.3-1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys.96, 997–1000 (2004). [CrossRef]

Appl. Phys. Express

• T. Tsuboi, X. Xu, J. Xia, N. Usami, T. Maruizumi, and Y. Shiraki, “Room temperature electroluminescence from Ge quantum dots embedded in photonic crystal microcavities,” Appl. Phys. Express5, 052101 (2012). [CrossRef]

Appl. Phys. Lett.

• J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett.89, 201102 (2006). [CrossRef]
• J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki, and N. Usami, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett.91, 011104 (2007). [CrossRef]
• D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si (100),” Appl. Phys. Lett.63, 3509–3511 (1993). [CrossRef]
• R. Apetz, L. Vescan, A. Hartmann, C. Dieker, and H. Luth, “Photoluminescence and electroluminescence of SiGe dots fabricated by island growth,” Appl. Phys. Lett.66, 445–447 (1995). [CrossRef]
• H.-S. Han, S.-Y. Seo, and J. H. Shin, “Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide,” Appl. Phys. Lett.79, 4568–4570 (2001). [CrossRef]
• S. Fukatsu, H. Sunamura, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett.71, 258–260 (1997). [CrossRef]
• T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hemandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett.77, 1822–1824 (2000). [CrossRef]
• Y. Tanaka, T. Asano, R. Hatsuta, and S. Noda, “Investigation of point-defect cavity formed in two-dimensional photonic crystal slab with one-sided dielectric cladding,” Appl. Phys. Lett.88, 011112 (2006). [CrossRef]
• S. Iwamoto, Y. Arakawa, and A. Gomyo, “Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature,” Appl. Phys. Lett.91, 211104 (2007). [CrossRef]
• S. Nakayama, S. Ishida, S. Iwamoto, and Y. Arakawa, “Effect of cavity mode volume on the photoluminescence from silicon photonic crystal nanocavities,” Appl. Phys. Lett.98, 171102 (2011). [CrossRef]

IEEE Trans. Electron Dev.

• A. Mokhberi, P. B. Griffin, J. D. Plummer, E. Paton, S. McCoy, and K. Elliot, “A comparative study of dopant activation in Boron, BF2, Arsenic, and Phosphorus implanted silicon,” IEEE Trans. Electron Dev.49, 1183–1191 (2002). [CrossRef]

J. Appl. Phys.

• M. El Kurdi, S. David, P. Boucaud, C. Kammerer, X. Li, V. Le Thanh, S. Sauvage, and J.-M. Lourtioz, “Strong 1.3-1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys.96, 997–1000 (2004). [CrossRef]

Nat. Photon.

• B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photon.5, 297–300 (2011). [CrossRef]

Nature (London)

• H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccia, “An all-silicon Raman laser,” Nature (London)433, 292–294 (2005). [CrossRef]
• L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature (London)408, 440–444 (2000). [CrossRef]

Opt. Express

• S. Cheng, J. Lu, G. Shambat, H. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express17, 10019–10024 (2009). [CrossRef] [PubMed]
• S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20, 3773–3780 (2012). [CrossRef] [PubMed]
• M. E. Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express16, 207–210 (2008).
• J. Xia, Y. Takeda, N. Usami, and T. Maruizumi, “Room-temperature electroluminescence from Si microdisks with Ge quantum dots,” Opt. Express18, 13945–13950 (2010). [CrossRef] [PubMed]

Phys. Rev.

• E. M. Purcell, “Spontaneous emission probabilities at radio frequencies,” Phys. Rev.69, 681 (1946).

Phys. Rev. B

• N. Tran, S. Combrie, P. Colman, A. D. Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B82, 075120 (2010). [CrossRef]

Proc. IEEE

• L. Tsybeskov, D. J. Lockwood, and M. Ichikawa“Silicon Photonics: CMOS Going Optical,” Proc. IEEE97, 1161–1165 (2009). [CrossRef]

Proc. SPIE

• B. J. Frey, D. B. Leviton, and T. J. Madison, “Temperature-dependent refractive index of silicon and germanium,” Proc. SPIE6273, 62732J (2006). [CrossRef]

Science

• H. G. Park, S. H. Kim, S. H. Kwon, Y. G. Ju, J. K. Yang, J. H. Baek, S. B. Kim, and Y. H. Lee, “Electrically driven single-cell photonic crystal laser,” Science305, 1444–1447 (2004). [CrossRef] [PubMed]

Other

• J. ZieglerSRIM The Stopping and Range of Ions in Matter, Version 2008.03, http://www.srim.org .
• G. T. ReedSilicon Photonics: The State of the Art (J. Wiley & Sons, 2008). [CrossRef]
• RSoft FullWAVE, RSoft Design Group, Inc., http://www.rsoftdesign.com .

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