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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 13 — Jun. 18, 2012
  • pp: 14714–14721

Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities

Xuejun Xu, Toshiki Tsuboi, Taichi Chiba, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki  »View Author Affiliations

Optics Express, Vol. 20, Issue 13, pp. 14714-14721 (2012)

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Room temperature light emission from Ge self-assembled quantum dots (QDs) embedded in L3-type photonic crystal (PhC) nanocavity is successfully demonstrated under current injection through a lateral PIN diode structure. The Ge QDs are grown on silicon-on-insulator (SOI) wafer by solid-source molecular beam epitaxy (SS-MBE), and the PIN diode is fabricated by selective ion implantation around the PhC cavity. Under an injected current larger than 0.5 mA, strong resonant electroluminescence (EL) around 1.3–1.5 μm wavelength corresponding to the PhC cavity modes is observed. A sharp peak with a quality factor up to 260 is obtained in the EL spectrum. These results show a possible way to realize practical silicon-based light emitting devices.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(140.3948) Lasers and laser optics : Microcavity devices
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:
Optical Devices

Original Manuscript: March 13, 2012
Revised Manuscript: May 7, 2012
Manuscript Accepted: May 30, 2012
Published: June 15, 2012

Xuejun Xu, Toshiki Tsuboi, Taichi Chiba, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki, "Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities," Opt. Express 20, 14714-14721 (2012)

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