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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 14 — Jul. 2, 2012
  • pp: 15114–15120

NbC/Si multilayer mirror for next generation EUV light sources

Mohammed H. Modi, S. K. Rai, Mourad Idir, F. Schaefers, and G. S. Lodha  »View Author Affiliations

Optics Express, Vol. 20, Issue 14, pp. 15114-15120 (2012)

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In the present study we report a new multilayer combination comprised of refracting layers of niobium carbide and spacer layers of silicon as a more stable and high reflecting combination for the 10 - 20 nm wavelength region. The reflectivity of the new combination is comparable to Mo/Si conventional mirrors. Annealing experiments carried out with NbC/Si multilayer at 600°C temperature showed a ~2.5% drop in the soft x-ray reflectivity along with a marginal contraction in the multilayer period length. The multilayer structure is found stable after the heat treatment. Crystallization of the niobium carbide and silicon layers is responsible for the compaction in the period length as revealed by the grazing incidence x-ray diffraction measurements. No signature of silicide formation or any other chemical species could be detected. The multilayer structures were grown by ion beam sputtering technique using a compound target of niobium carbide. Soft x-ray reflectivity measurements performed at the Indus-1 and BESSY-II synchrotron radiation sources are found in good agreement with the simulations.

© 2012 OSA

OCIS Codes
(230.4170) Optical devices : Multilayers
(310.1860) Thin films : Deposition and fabrication
(340.7470) X-ray optics : X-ray mirrors
(310.4165) Thin films : Multilayer design

ToC Category:
Thin Films

Original Manuscript: May 16, 2012
Manuscript Accepted: May 30, 2012
Published: June 20, 2012

Mohammed H. Modi, S. K. Rai, Mourad Idir, F. Schaefers, and G. S. Lodha, "NbC/Si multilayer mirror for next generation EUV light sources," Opt. Express 20, 15114-15120 (2012)

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