High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target

doi:10.1364/OE.20.015149

High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target

Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng »View Author Affiliations

Optics Express, Vol. 20, Issue 14, pp. 15149-15156 (2012)
http://dx.doi.org/10.1364/OE.20.015149

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Abstract

High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Thin Films

History
Original Manuscript: April 26, 2012
Revised Manuscript: June 4, 2012
Manuscript Accepted: June 4, 2012
Published: June 21, 2012

Citation
Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng, "High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target," Opt. Express 20, 15149-15156 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-14-15149

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References

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, 1997), pp. 201–260.
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741–4743 (2002). [CrossRef]
V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, “Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap,” Phys. Status Solidi B229(3), R1–R3 (2002). [CrossRef]
O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett.91(13), 132117 (2007). [CrossRef]
J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett.98(13), 131115 (2011). [CrossRef]
E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett.98(2), 021102 (2011). [CrossRef]
C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett.76(26), 3902–3904 (2000). [CrossRef]
E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci.203(1), 102–105 (2006). [CrossRef]
B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett.93(18), 182107 (2008). [CrossRef]
R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. A. Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett.71(1), 102–104 (1997). [CrossRef]
P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron.47(3), 559–563 (2003). [CrossRef]
J. Ohta, H. Fujioka, T. Honke, and M. Oshima, “Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source,” Thin Solid Films457(1), 109–113 (2004). [CrossRef]
C. Ristoscu, C. Ghica, E. L. Papadopoulou, G. Socol, D. Gray, B. Mironov, I. N. Mihailescu, and C. Fotakis, “Modification of AlN thin films morphology and structure by temporally shaping of fs laser pulses used for deposition,” Thin Solid Films519(19), 6381–6387 (2011). [CrossRef]
A. Kobayashi, J. Ohta, and H. Fujioka, “Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures,” Jpn. J. Appl. Phys.45(24), L611–L613 (2006). [CrossRef]
Y. Bu, L. Ma, and M. C. Lin, “Laser‐assisted chemical vapor deposition of InN on Si (100),” J. Vac. Sci. Technol. A11(6), 2931–2937 (1993). [CrossRef]
H. Parala, A. Devi, F. Hipler, E. Maile, A. Birkner, H. W. Becker, and R. A. Fischer, “Investigations on InN whiskers grown by chemical vapour deposition,” J. Cryst. Growth231(1), 68–74 (2001). [CrossRef]
K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface Modification on Wet-etched Patterned Sapphire Substrates using Plasma Treatments for Improved GaN Crystal Quality and LED Performance,” J. Electrochem. Soc.158(10), H988–H993 (2011). [CrossRef]
V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res.230(2), R4–R6 (2002). [CrossRef]
I. Ho and G. B. Stringfellow, “Solid phase immiscibility in GaInN,” Appl. Phys. Lett.69(18), 2701–2703 (1996). [CrossRef]
A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, “Indium nitride (InN): A review on growth, characterization, and properties,” J. Appl. Phys.94(5), 2779–2808 (2003). [CrossRef]

Aderhold, J.
Adikimenakis, A.
Ager, J. W.
Al-Heji, A. A.
Alves, H.
Androulidaki, M.
Bechstedt, F.
Becker, H. W.
Bhuiyan, A. G.
Birkner, A.
Bu, Y.
Chen, X.
Choopun, S.
Chuo, C. C.
Chyi, J. I.
Cruz, S. C.
Davydov, V. Y.
Davydov, V. Yu.
DenBaars, S.
Devi, A.
Dimakis, E.
Downes, M.
Emtsev, V. V.
Farrell, R. M.
Ferguson, I.
Fischer, R. A.
Fotakis, C.
Fujioka, H.
Furthmuller, J.
Georgakilas, A.
Ghica, C.
Graul, J.
Gray, D.
Haller, E. E.
Harima, H.
Hashimoto, A.
Hipler, F.
Ho, I.
Honke, T.
Honsberg, C.
Horng, R. H.
Hurni, C. A.
Iliadis, A. A.
Iliopoulos, E.
Ivanov, S. V.
Iza, M.
Jani, O.
Jiang, H. X.
Jones, K. A.
Keller, S.
Khan, M. A.
Klochikhin, A. A.
Kobayashi, A.
Koynov, S.
Kurtz, S.
Lang, J. R.
Lee, C. M.
Li, J.
Lin, J. Y.
Lin, M. C.
Lu, H.
Ma, L.
Maile, E.
Matioli, E.
Melo, L. V.
Meyer, B. K.
Mihailescu, I. N.
Mironov, B.
Mishra, U.
Mishra, U. K.
Monteiro, T.
Mudryi, A. V.
Nakamura, S.
Nee, T. E.
Neufeld, C.
Neufeld, C. J.
Niehus, M.
Ohta, J.
Oshima, M.
Ou, S. L.
Pantha, B. N.
Papadopoulou, E. L.
Parala, H.
Pelekanos, N. T.
Ristoscu, C.
Sanguino, P.
Schaff, W. J.
Schwarz, R.
Seisyan, R. P.
Semchinova, O.
Sharma, R. P.
Shen, C. C.
Shen, K. C.
Soares, J.
Socol, G.
Speck, J.
Speck, J. S.
Stringfellow, G. B.
Talyansky, V.
Tsagaraki, K.
Vekshin, V. V.
Venkatesan, T.
Vispute, R. D.
Walukiewicz, W.
Weisbuch, C.
Wu, J.
Wuu, D. S.
Yamamoto, A.
Yang, J. W.
Yu, K. M.

Appl. Phys. Lett.

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett.91(13), 132117 (2007). [CrossRef]
J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, “High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy,” Appl. Phys. Lett.98(13), 131115 (2011). [CrossRef]
E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett.98(2), 021102 (2011). [CrossRef]
C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett.76(26), 3902–3904 (2000). [CrossRef]
B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett.93(18), 182107 (2008). [CrossRef]
R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. A. Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett.71(1), 102–104 (1997). [CrossRef]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741–4743 (2002). [CrossRef]
I. Ho and G. B. Stringfellow, “Solid phase immiscibility in GaInN,” Appl. Phys. Lett.69(18), 2701–2703 (1996). [CrossRef]

J. Appl. Phys.

A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, “Indium nitride (InN): A review on growth, characterization, and properties,” J. Appl. Phys.94(5), 2779–2808 (2003). [CrossRef]

J. Cryst. Growth

H. Parala, A. Devi, F. Hipler, E. Maile, A. Birkner, H. W. Becker, and R. A. Fischer, “Investigations on InN whiskers grown by chemical vapour deposition,” J. Cryst. Growth231(1), 68–74 (2001). [CrossRef]

J. Electrochem. Soc.

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface Modification on Wet-etched Patterned Sapphire Substrates using Plasma Treatments for Improved GaN Crystal Quality and LED Performance,” J. Electrochem. Soc.158(10), H988–H993 (2011). [CrossRef]

J. Vac. Sci. Technol. A

Y. Bu, L. Ma, and M. C. Lin, “Laser‐assisted chemical vapor deposition of InN on Si (100),” J. Vac. Sci. Technol. A11(6), 2931–2937 (1993). [CrossRef]

Jpn. J. Appl. Phys.

A. Kobayashi, J. Ohta, and H. Fujioka, “Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures,” Jpn. J. Appl. Phys.45(24), L611–L613 (2006). [CrossRef]

Phys. Status Solidi B

V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, “Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap,” Phys. Status Solidi B229(3), R1–R3 (2002). [CrossRef]

Phys. Status Solidi, B Basic Res.

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res.230(2), R4–R6 (2002). [CrossRef]

Phys. Status Solidi., A Appl. Mater. Sci.

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci.203(1), 102–105 (2006). [CrossRef]

Solid-State Electron.

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron.47(3), 559–563 (2003). [CrossRef]

Thin Solid Films

J. Ohta, H. Fujioka, T. Honke, and M. Oshima, “Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source,” Thin Solid Films457(1), 109–113 (2004). [CrossRef]
C. Ristoscu, C. Ghica, E. L. Papadopoulou, G. Socol, D. Gray, B. Mironov, I. N. Mihailescu, and C. Fotakis, “Modification of AlN thin films morphology and structure by temporally shaping of fs laser pulses used for deposition,” Thin Solid Films519(19), 6381–6387 (2011). [CrossRef]

Other

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, 1997), pp. 201–260.

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