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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 14 — Jul. 2, 2012
  • pp: 15149–15156

High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target

Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng  »View Author Affiliations


Optics Express, Vol. 20, Issue 14, pp. 15149-15156 (2012)
http://dx.doi.org/10.1364/OE.20.015149


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Abstract

High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

© 2012 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Thin Films

History
Original Manuscript: April 26, 2012
Revised Manuscript: June 4, 2012
Manuscript Accepted: June 4, 2012
Published: June 21, 2012

Citation
Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng, "High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target," Opt. Express 20, 15149-15156 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-14-15149


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