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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 14 — Jul. 2, 2012
  • pp: 15247–15252

Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, and Tatsuo Okada  »View Author Affiliations


Optics Express, Vol. 20, Issue 14, pp. 15247-15252 (2012)
http://dx.doi.org/10.1364/OE.20.015247


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Abstract

The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

© 2012 OSA

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(160.6000) Materials : Semiconductor materials
(160.4236) Materials : Nanomaterials
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Laser Microfabrication

History
Original Manuscript: April 3, 2012
Revised Manuscript: June 3, 2012
Manuscript Accepted: June 7, 2012
Published: June 22, 2012

Citation
Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, and Tatsuo Okada, "Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods," Opt. Express 20, 15247-15252 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-14-15247


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