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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 15 — Jul. 16, 2012
  • pp: 16639–16649

Implantation damage effects on the Er3+ luminescence in silica

T. Cesca, C. Maurizio, B. Kalinic, G. Perotto, P. Mazzoldi, E. Trave, G. Battaglin, and G. Mattei  »View Author Affiliations

Optics Express, Vol. 20, Issue 15, pp. 16639-16649 (2012)

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The possibility to control the room temperature Er3+ photoluminescence efficiency in silica is investigated in terms of the damage produced in Er-doped silica by implantations at different fluences with Xe or Au ions. These implantations are tailored to reproduce the same level of damage in Er-doped silica. The remarkable differences in terms of the photoluminescence intensity between Xe- and Au-irradiated samples allowed to decouple the detrimental effect of the implantation damage on the photoluminescence from the beneficial broad-band energy transfer process provided by molecule-like Au clusters formed upon thermal annealing. The evolution of the implantation damage is followed by photoluminescence and correlated to the local Er-site by x-ray absorption spectroscopy.

© 2012 OSA

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(160.6030) Materials : Silica
(260.2160) Physical optics : Energy transfer
(310.3840) Thin films : Materials and process characterization

ToC Category:

Original Manuscript: April 16, 2012
Manuscript Accepted: May 14, 2012
Published: July 9, 2012

T. Cesca, C. Maurizio, B. Kalinic, G. Perotto, P. Mazzoldi, E. Trave, G. Battaglin, and G. Mattei, "Implantation damage effects on the Er3+ luminescence in silica," Opt. Express 20, 16639-16649 (2012)

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