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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 15 — Jul. 16, 2012
  • pp: 16745–16756

Heterogeneous Si/III-V integration and the optical vertical interconnect access

Qian Wang, Doris Keh Ting Ng, Yadong Wang, Yongqiang Wei, Jing Pu, Payam Rabiei, and Seng Tiong Ho  »View Author Affiliations

Optics Express, Vol. 20, Issue 15, pp. 16745-16756 (2012)

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A new heterogeneous Si/III-V integration and the optical vertical interconnect access to the silicon-on-insulator (SOI) nanophotonic layer is proposed and designed. The III-V semiconductor layers are directly bonded to the SOI layer and etched to form the Si/III-V waveguide (after removal of the substrate), which has no air-trench or SOI channel waveguide underneath as the prior art. The design example shows a 1.5 μm wide Si/III-V waveguide has a confinement factor of ~24% in a 100 nm-thick active region for effective light amplification/absorption. The optical vertical interconnect access is realized through tapering both the III-V semiconductor waveguide and SOI layer in the same direction. Optimization using a simple approximated two-dimensional modal presented gives ~100% coupling efficiency with a 25 μm long optical vertical interconnect access. A three-dimensional finite-difference-time-domain electromagnetic simulation verifies the design numerically and also shows the proposed structure has a good alignment tolerance for fabrication.

© 2012 OSA

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Integrated Optics

Original Manuscript: February 10, 2012
Revised Manuscript: June 14, 2012
Manuscript Accepted: June 18, 2012
Published: July 10, 2012

Qian Wang, Doris Keh Ting Ng, Yadong Wang, Yongqiang Wei, Jing Pu, Payam Rabiei, and Seng Tiong Ho, "Heterogeneous Si/III-V integration and the optical vertical interconnect access," Opt. Express 20, 16745-16756 (2012)

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