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Heterogeneous Si/III-V integration and the optical vertical interconnect access |
Optics Express, Vol. 20, Issue 15, pp. 16745-16756 (2012)
http://dx.doi.org/10.1364/OE.20.016745
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Abstract
A new heterogeneous Si/III-V integration and the optical vertical interconnect access to the silicon-on-insulator (SOI) nanophotonic layer is proposed and designed. The III-V semiconductor layers are directly bonded to the SOI layer and etched to form the Si/III-V waveguide (after removal of the substrate), which has no air-trench or SOI channel waveguide underneath as the prior art. The design example shows a 1.5 μm wide Si/III-V waveguide has a confinement factor of ~24% in a 100 nm-thick active region for effective light amplification/absorption. The optical vertical interconnect access is realized through tapering both the III-V semiconductor waveguide and SOI layer in the same direction. Optimization using a simple approximated two-dimensional modal presented gives ~100% coupling efficiency with a 25 μm long optical vertical interconnect access. A three-dimensional finite-difference-time-domain electromagnetic simulation verifies the design numerically and also shows the proposed structure has a good alignment tolerance for fabrication.
© 2012 OSA
OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits
ToC Category:
Integrated Optics
History
Original Manuscript: February 10, 2012
Revised Manuscript: June 14, 2012
Manuscript Accepted: June 18, 2012
Published: July 10, 2012
Citation
Qian Wang, Doris Keh Ting Ng, Yadong Wang, Yongqiang Wei, Jing Pu, Payam Rabiei, and Seng Tiong Ho, "Heterogeneous Si/III-V integration and the optical vertical interconnect access," Opt. Express 20, 16745-16756 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-15-16745
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